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led chip and its preparation method

A technology of LED chips and layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high chip current density, increased chip power consumption, and reduced chip performance, and achieve the effect of improving luminous efficiency

Active Publication Date: 2015-12-02
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Part of the light emitted by the LED chip will be absorbed by it, reducing the brightness of the chip. The light absorption intensity of the transparent conductive film increases exponentially with its thickness, so it must be made as thin as possible to increase the transmittance. This will bring another problem: the thinner the film, the higher the sheet resistance, and the power consumption of the chip will increase
When the sheet resistance of the two does not match, the chip will have a local injection current density that is too high, and the uneven distribution of the current will lead to a decrease in chip performance

Method used

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Embodiment Construction

[0035] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0036] ginseng figure 1 As shown, the LED chip in an embodiment of the present invention includes:

[0037] Substrate 10, such as sapphire substrate, Si substrate, SiC substrate, GaN substrate, ZnO substrate, etc.;

[0038] N-type semiconductor layer 20, such as N-type GaN;

[0039] Light emitting layer 30, such as GaN, InGaN, etc.; ...

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Abstract

The invention discloses an LED chip and a preparation method thereof. The LED chip comprises a substrate as well as an N type semiconductor layer, a luminous layer, a P type semiconductor layer and a transparent conducting layer which are sequentially located on the substrate, and the LED chip further comprises a P electrode which is located on the transparent conducting layer and electrically connected with the transparent conducting layer, as well as an N electrode which is located on the side of the transparent conducting layer and electrically connected with the N type semiconductor layer, wherein a plurality of unevenly distributed opening patterns are arranged on the transparent conducting layer, and the density distribution of the opening patterns correspond to that of current. The LED chip and the preparation method thereof adopt an imaging technology of the transparent conducting layer, so that the current can be uniformly injected into the whole LED chip to the greatest extent, the LED chip can work in a uniform luminous state, and the luminous efficiency of the LED chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to an LED chip and a preparation method thereof. Background technique [0002] In the LED field, due to the poor conductivity of the P-type semiconductor on the surface of the diode, it is inevitable to use a transparent conductive film to extend the current to the entire LED light-emitting area without blocking the light. At present, the ITO film is the most used, which solves the problem of P-electrode current conduction to a certain extent. [0003] Although the transparent conductive film is called transparent, its transmittance to visible light is not 100%, and there is still a small amount of absorption. Part of the light emitted by the LED chip will be absorbed by it, reducing the brightness of the chip. The light absorption intensity of the transparent conductive film increases exponentially with its thickness, so it must be made as thin as poss...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/00
Inventor 陈家洛吴飞翔陈立人
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD