Low-light-degradation and high-power LED street lamp and manufacturing method thereof

A technology for LED street lamps and LED bulbs, applied in circuits, light sources, electric light sources, etc., can solve the problems of inability to cool down LED lamps, shorten service life, and poor heat dissipation effect, and achieve improved cooling effect, work efficiency, and excellent cooling effect. Effect

Active Publication Date: 2013-11-20
陈志明 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the heat dissipation structure of the LED light source in the prior art generally uses aluminum alloy structure heat sinks or heavy-duty aluminum injection parts for heat dissipation. The disadvantages of high cost and inability to effectively cool down the LED lights during work are not ideal, and it is not suitable for use on high-power LED lights above 150 watts; in addition, due to the heat dissipation of aluminum profiles, large The cascade temperature often makes the LED light-emitting diode as a light source work under high temperature conditions, and sometimes the LED light-emitting diode will even work at a temperature higher than 70 ° C, so that the LED light-emitting diode will age in advance and appear Substantial light decay phenomenon, its luminous efficiency is greatly reduced, which not only increases the energy consumption of LED light-emitting diodes, but also greatly shortens its service life and increases the cost of use; and the existing high-power LED street lamps are due to heat dissipation The needs of the heat sink must be made very large, so there are still problems such as large volume and heavy weight.
Therefore, the structure of the existing LED street lamps using LED light-emitting diodes as the light source is still not ideal, and the energy-saving advantages of the existing LED light source cannot be fully utilized.

Method used

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  • Low-light-degradation and high-power LED street lamp and manufacturing method thereof
  • Low-light-degradation and high-power LED street lamp and manufacturing method thereof

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Embodiment Construction

[0013] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0014] Embodiments of the present invention: a method for manufacturing a low-light decay high-power LED street lamp of the present invention includes using existing N-type semiconductor elements and P-type semiconductor elements as cooling elements to carry out a circuit board equipped with LED light-emitting diode bulbs. To dissipate heat and cool down, when using the existing N-type semiconductor elements and P-type semiconductor elements as refrigeration elements, the semiconductor ingot for making N-type semiconductor elements or P-type semiconductor elements is made in advance into a cone with a large diameter at one end and a small diameter at the other end Body-shaped ingot (the diameter of the small-diameter end of the conical ingot can be determined according to the needs of use, and its taper can be controlled between 2 and 5 degrees...

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Abstract

The invention discloses a low-light-degradation and high-power LED street lamp and a manufacturing method thereof. According to the low-light-degradation and high-power LED street lamp and the manufacturing method thereof, color code marks are arranged on the tail end faces of N type semiconductor elements or on the tail end faces of P type semiconductor elements, wherein the N type semiconductor elements and the P type semiconductor elements are manufactured in advance; the N type semiconductor elements and the P type semiconductor elements are arranged between an upper beryllium oxide ceramic wafer with a conductive circuit and a lower beryllium oxide ceramic wafer with a conductive circuit in a matrix mode, and the head end of each N type semiconductor element is made to be connected with the tail end of a corresponding P type semiconductor element or the tail end of each N type semiconductor element is made to be connected with the head end of a corresponding P type semiconductor element, wherein the N type semiconductor elements and the P type semiconductor elements are connected in series; the lower beryllium oxide ceramic wafer is then attached to the back side of a circuit board through a graphene heat conductive grease layer, wherein LED bulbs are installed on the circuit board; a radiator is installed on the upper beryllium oxide ceramic wafer; the circuit board together with the radiator is installed in a street lamp shade. The low-light-degradation and high-power LED street lamp and the manufacturing method thereof have the advantages that the radiating effect is good, light degradation is avoided when an LED light source works, the service life is long, cost is low, and the energy-saving effect is obvious.

Description

technical field [0001] The invention relates to a high-power LED street lamp with low light attenuation and a manufacturing method thereof, belonging to the technical field of high-power LED street lamps. Background technique [0002] At present, LED light-emitting diodes have been widely used as light sources for lighting because they have the advantages of energy saving, high brightness, and small size as light sources. However, the heat dissipation structure of the LED light source in the prior art generally uses aluminum alloy structure heat sinks or heavy-duty aluminum injection parts for heat dissipation. The disadvantages of high cost and inability to effectively cool down the LED lights during work are not ideal, and it is not suitable for use on high-power LED lights above 150 watts; in addition, due to the heat dissipation of aluminum profiles, large The cascade temperature often makes the LED light-emitting diode as a light source work under high temperature con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F21V29/00H01L23/367F21Y101/02F21V29/51F21V29/54
CPCY02B20/72F21S8/086F21W2131/103F21V29/51F21V29/54F21Y2115/10F21V29/76H10N10/01H10N10/17F21V29/71
Inventor 陈志明顾伟
Owner 陈志明
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