Nanowatt magnitude band-gap reference voltage source with low power consumption and high stability

Abstract

The invention relates to an nW (nanowatt) magnitude band-gap reference voltage source with low power consumption and high stability. The voltage source comprises a start-up module parallelly connected between a power supply and the ground, a high steady current source generating module, a sampling module and a PTAT voltage weighting module, wherein the output end of the start-up module is connected with the high steady current source generating module; the output end of the high steady current source generating module is connected with the sampling module and the PTAT voltage weighting module; the output end of the sampling module is connected with the PTAT voltage weighting module; the output end of the PTAT voltage weighting module serves as the output end of the nW magnitude band-gap reference voltage source with low power consumption and high stability; the high steady current source generating module comprises a voltage generating circuit, a voltage biasing circuit, and a current source circuit connected with the voltage generating circuit. According to the invention, the nW magnitude band-gap reference voltage source with extremely low power consumption is realized, the circuits have no resistance, and the band-gap voltage and biasing current are irrelevant to the threshold voltage of an MOS tube, so that the chip size is reduced, while higher process stability is realized.

Description

technical field [0001] The invention relates to a bandgap reference voltage source. Background technique [0002] The development of integrated circuits into the era of system chips encountered a bottleneck in low power consumption technology. At the same time, various portable technology products have put forward requirements for the design of system chips with extremely low power consumption. Bandgap reference sources can provide high-precision, high-stability reference voltage or current, and are widely used in large-scale integrated circuits, such as digital-to-analog converters, wireless sensor networks, power control management systems, and various high-precision measuring instruments . Its performance directly affects the performance of each module in the circuit and plays a very important role. An integrated circuit on the order of nanowatts (nW) requires a bandgap reference source on the order of nW. [0003] In order to achieve the extremely low power consumpti...

AI Technical Summary

Problems solved by technology

For a current of nA level, resistors with hundreds of megabytes of resistance are required, which takes up a large chip area. At the same time, resistors in standard integrated circuit technology usually have a resistance value change of 8% to 20%, and the accuracy is not high.

[0004] Document "A sub-1-V, 10ppm / C, nanopower voltage reference generator," G.D.Vita and G.Iannaccone, and document "A300nW, 15ppm / ℃, 20ppm / V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs," K. Ueno, T.Hirose, T.Asai, and Y.Amemiya all reported the design and realization of nW-level bandgap reference voltage source without resistance, but the above-mentioned bandgap output voltages are related to the threshold value of MOS tubes. Therefore, The bandgap reference voltage is greatly affected by the process

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