Array substrate, preparing method thereof and display device

Abstract

An array substrate and manufacturing method thereof, and display device, the array substrate manufacturing method comprising: forming on a substrate (11) common electrodes (20) having a slit structure, and pixel electrodes (19) not overlapping the common electrodes (20) and having a slit structure. The array substrate and display device manufactured by employing the method reduces the storage capacitance of the common electrodes (20) and the pixel electrodes (19), and ensures image quality.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display device. Background technique [0002] TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor Liquid Crystal Display) uses the change of the electric field intensity set on the liquid crystal layer to change the degree of rotation of liquid crystal molecules, thereby controlling the intensity of light transmission to display images . Generally speaking, a complete liquid crystal display panel must have a backlight module group, a polarizer, an upper substrate (usually a color filter substrate), a lower substrate (usually an array substrate), and a box filled with the two substrates. Layers of liquid crystal molecules. [0003] On the array substrate, data lines and gate lines intersecting horizontally and vertically are formed, and the data lines and gate lines surround pixe...

AI Technical Summary

Problems solved by technology

like figure 1 As shown, the storage capacitance (Cst) of the common electrode 111 and the pixel electrode 112 of the TFT array substrate 110 in the ADS mode is very large, almost occupying the entire pixel area, especially for large-sized products, due to the larger pixel area, the storage capacitance It will become larger. Usually, in order to adapt to such a large storage capacitor, it is necessary to design a larger thin film transistor for filling. The larger thin film transistor will occupy the pixel area, and the second is the coupling capacitance Cgd, Cgs of the thin film transistor itself. will become larger, which will affect the display of the screen, and thus be subject to many restrictions in design. Generally, one of the most direct methods to solve such problems is to form the ADS type pixel electrode 112 and the common electrode 111 as figure 2 The state shown, but the current process cannot be directly realized, because the pixel electrode 112 and the common electrode 111 are both transparent electrodes, and the alignment effect of the transparent film is limited during the process of exposing and developing through process equipment. , the device simply cannot be truly as figure 2 In the structure shown, if the relative displacement between the pixel electrode and the common electrode is not uniform in an effective display area due to process alignment deviation, for example, the pixel electrode 112 in a part of the area is deflected to the left relative to the common electrode 111, while the pixel electrode 112 in another part of the area is biased to the left. Relative to the common electrode 111 to the right, there will be unevenness between Cst regions, which will be reflected in the screen, and the display grayscale between various regions on a display will be uneven, and what the human eye feels is the display between the screen regions. Uneven brightness leads to picture distortion, which is a very fatal display defect, and there is no good solution in the prior art

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