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38results about How to "Reduce storage capacitance" patented technology

Array substrate, manufacturing method thereof and wide-viewing angle liquid crystal display

The invention relates to an array substrate, a manufacturing method thereof and a wide-viewing angle liquid crystal display. The array substrate comprises a substrate, a plurality of pixel areas and an organic transparent insulating layer, wherein the organic transparent insulating layer is formed between a passivation layer and a pixel electrode. The manufacturing method comprises the following steps of: forming a public electrode, a public electrode wire and patterns of a thin film transistor switch on the substrate; depositing the passivation layer; forming the organic transparent insulating layer, an organic layer via hole and a passivation layer via hole on the passivation layer; and forming patterns of the pixel electrode on the organic transparent insulating layer, wherein a plurality of gaps are formed on the patterns of the pixel electrode, and the pixel electrode is connected with the thin film transistor switch through the organic layer via hole and the passivation layer via hole. A liquid crystal display of the invention comprises the array substrate. In the array substrate, the technical means of adding the organic transparent insulating layer between the pixel electrode and the passivation layer is adopted to increase the thickness of film layers between the pixel electrode and the public electrode, so that the storage capacitance and residual images can be reduced effectively.
Owner:BOE TECH GRP CO LTD

Array substrate, display device and manufacturing method of array substrate

The invention relates to the display technical field, and discloses an array substrate, a display device and a manufacturing method of the array substrate. The array substrate comprises an underlayer substrate and a plurality of thin film transistors arranged in an array and further comprises public electrode wires, public electrodes and an insulating layer, wherein the public electrode wires are positioned on the underlayer substrate, the public electrodes are positioned on the underlayer substrate and connected with the public electrode wires, and the insulating layer covers the public electrode wires, the public electrodes and the underlayer substrate. The thin film transistors are positioned on the insulating layer, and scanning lines connected with grids of the thin film transistors in each row are positioned above the public electrode wires. By adoption of the technical scheme, due to the fact that the public electrode wires are positioned below the scanning lines, and the insulating layer is adopted for carrying out insulating between the scanning lines and the public electrode wires, the line width of a black matrix of a color film substrate can be reduced correspondingly, and then an aperture opening ratio and transmittance of a panel are improved.
Owner:BOE TECH GRP CO LTD +1

CMOS image sensor

The embodiment of the invention provides a CMOS image sensor and relates to the technical field of semiconductors. The CMOS image sensor can achieve high-sensitivity and high-speed responses. Each pixel unit of the CMOS image sensor comprises a P type semiconductor substrate, a first N type ion layer on the upper portion of the P type semiconductor substrate, a P trap surrounding the first N type ion layer, a second N type ion layer, a third N type ion layer, a first P type ion layer and a second P type ion layer, wherein the second N type ion layer, the third N type ion layer, the first P type ion layer and the second P type ion layer are arranged on the upper portion of the first N type ion layer; the first P type ion layer and the second P type ion layer are spaced by the second N type ion layer, the second N type ion layer and the third N type ion layer are spaced by the second P type ion layer, the doping concentration of the second N type ion layer and the doping concentration of the third N type ion layer are larger than the doping concentration of the first N type ion layer, and the doping concentration of the first P type ion layer and the doping concentration of the second P type ion layer are between the doping concentration of the P trap and the doping concentration of the P type semiconductor substrate. The CMOS image sensor is used for sensor manufacturing.
Owner:BOE TECH GRP CO LTD

Array substrate, manufacturing method thereof, and display device

The invention discloses an array substrate and a manufacturing method of the array substrate as well as a display device. The array substrate comprises a pixel array composed of pixel units which are arrayed in a matrix manner, and a plurality of grid electrode wires which extend along the transverse direction of the pixel array; a routing region is arranged between every two adjacent rows of the pixel units; types of each routing region comprise a first routing region, a second routing region and a third routing region; each routing region is provided with a data line; at most one grid electrode output line is arranged in each second routing region, and is connected with the corresponding grid electrode line; each third routing region is provided with two data lines located on different thin film layers; the distance between the two data lines of each third routing region along the transverse direction of the pixel units is less than or equal to 0. According to the array substrate disclosed by the invention, the distance between the grid electrode output line and each data line can be increased, voltage coupling on the data lines is reduced, and the bright spot problem is solved; meanwhile, the distance between the two data lines of each third routing region is reduced, and influences on the picture quality effect can be weakened.
Owner:XIAMEN TIANMA MICRO ELECTRONICS

Array substrate, manufacturing method thereof, and wide viewing angle liquid crystal display

The invention relates to an array substrate, a manufacturing method thereof and a liquid crystal display with a wide viewing angle. The array substrate includes a base substrate and a plurality of pixel regions, and also includes an organic transparent insulating layer formed between the passivation layer and the pixel electrodes. The manufacturing method includes: forming a common electrode, a common electrode line, and a pattern of a thin film transistor switch on a base substrate; depositing a passivation layer; forming an organic transparent insulating layer on the passivation layer, and forming an organic layer via hole and a passivation layer A via hole: a pattern of the pixel electrode is formed on the organic transparent insulating layer, the pattern of the pixel electrode has a plurality of gaps, and the pixel electrode is connected to the thin film transistor switch through the organic layer via hole and the passivation layer via hole. The liquid crystal display of the present invention includes the array substrate of the present invention. The invention adopts the technical means of adding an organic transparent insulating layer between the pixel electrode and the passivation layer, increases the thickness of the film layer between the pixel electrode and the common electrode, can effectively reduce the storage capacitance and reduce afterimages.
Owner:BOE TECH GRP CO LTD

PWM modulation assembly of H-bridge drive circuit

The invention provides a PWM modulation assembly of an H-bridge drive circuit. Four switch tubes of the H-bridge drive circuit are NMOS tubes. Gates of the switch tubes are respectively connected withthe drive circuit; the input end of the drive circuit is connected with the signal output end of an H-bridge drive signal generation circuit; the H-bridge drive signal generation circuit continuouslyoutputs a conduction signal to the drive circuit corresponding to an upper tube on one side, continuously outputs a cut-off signal to the drive circuit corresponding to a lower tube on the other side, and alternately outputs cut-off and conduction signals to the drive circuits corresponding to an upper tube and a lower tube on the other side. According to the modulation assembly, the upper tube on the first side is always in a conduction state, and large parasitic capacitance exists between the grid electrode of the upper tube on the first side and the power supply voltage, so that the storage capacitance of a boost circuit is greatly reduced; and the upper tube on the first side is conducted, and the lower tube on the first side is cut off, so that the output end of the H-bridge drive circuit cannot generate negative voltage, and the circuit works more reliably than before.
Owner:SHANGHAI ORIENT CHIP TECH CO LTD +1

A cmos image sensor

The embodiment of the invention provides a CMOS image sensor and relates to the technical field of semiconductors. The CMOS image sensor can achieve high-sensitivity and high-speed responses. Each pixel unit of the CMOS image sensor comprises a P type semiconductor substrate, a first N type ion layer on the upper portion of the P type semiconductor substrate, a P trap surrounding the first N type ion layer, a second N type ion layer, a third N type ion layer, a first P type ion layer and a second P type ion layer, wherein the second N type ion layer, the third N type ion layer, the first P type ion layer and the second P type ion layer are arranged on the upper portion of the first N type ion layer; the first P type ion layer and the second P type ion layer are spaced by the second N type ion layer, the second N type ion layer and the third N type ion layer are spaced by the second P type ion layer, the doping concentration of the second N type ion layer and the doping concentration of the third N type ion layer are larger than the doping concentration of the first N type ion layer, and the doping concentration of the first P type ion layer and the doping concentration of the second P type ion layer are between the doping concentration of the P trap and the doping concentration of the P type semiconductor substrate. The CMOS image sensor is used for sensor manufacturing.
Owner:BOE TECH GRP CO LTD
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