Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wave-band-cross mechanical frequency modulation relativity back wave oscillator

A mechanical frequency modulation and relativity technology, applied in the direction of traveling wave tubes, collectors of time-of-flight electron tubes, circuit components of time-of-flight electron tubes, etc., can solve problems such as narrow tuning bandwidth and complicated RBWO adjustment methods, and achieve narrowing Radial size, miniaturization, and simple adjustment

Active Publication Date: 2013-12-18
NAT UNIV OF DEFENSE TECH
View PDF2 Cites 39 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is: to overcome the shortcomings of the usual frequency RBWO adjustment methods and narrow tuning bandwidth, to design a cross-band mechanical tuner RBWO, and the microwave source has a compact structure and high power conversion efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wave-band-cross mechanical frequency modulation relativity back wave oscillator
  • Wave-band-cross mechanical frequency modulation relativity back wave oscillator
  • Wave-band-cross mechanical frequency modulation relativity back wave oscillator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] figure 1 It is a structural schematic diagram of the mechanical frequency modulation RBWO disclosed in prior art 1. For the convenience of description, the side close to the cathode seat along the axis is called the left end, and the side far away from the cathode seat is called the right end. The structure is composed of a cathode seat 101, a cathode 102, an anode outer cylinder 103, a cut-off neck 104, a drift section 112, a slow wave structure 105, a reflection section 113, a microwave output port 108, and a solenoid magnetic field 109. The entire structure rotates about the central axis symmetry. Although the paper published the experimental results, it only gave a schematic diagram of the structure without a specific technical solution. The following is a brief introduction to the general connection relationship of this structure. The left end of the cathode base 101 is externally connected to the inner conductor of the pulse power source, and the left end of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to microwave source devices in the technical field of high-power microwaves and provides a wave-band-cross mechanical frequency modulation relativity back wave oscillator. The wave-band-cross mechanical frequency modulation relativity back wave oscillator comprises a cathode seat, a cathode, an anode outer cylinder, a cut-off neck, a slow wave structure, an inner conductor, a collector, a microwave output and a solenoidal magnetic field. The inner conductor is a cylinder, by adjusting the length of the inner conductor, the frequency of outputting microwaves can be adjusted, and outputting of wave-band-cross microwaves is achieved. An annular groove is formed in the collector, and a supporting rod is fixed on the anode outer cylinder. The wave-band-cross mechanical frequency modulation relativity back wave oscillator has the advantages that by adjusting the length of the inner conductor, frequency can jump between L wavebands and S wavebands, the adjusting manner is simple, the frequency in the wavebands can be adjusted, the bandwidth in the L-waveband frequency is adjusted by 7% or so, and the bandwidth in the S-waveband frequency is adjusted by 2% or so. The outer radius of a slow-wave vane can have a low value, and miniaturization is achieved. A groove structure is reserved at the left end of the collector, reflection of the tail end of the device can be increased, and achieving long-pulse outputting of the wavebands is facilitated.

Description

technical field [0001] The invention relates to microwave source devices in the technical field of high-power microwaves, in particular to a cross-band mechanical frequency modulation relativistic back-wave oscillator (Relativistic Backward-Wave Oscillator, RBWO for short). Background technique [0002] High-power microwaves usually refer to electromagnetic waves with a microwave pulse peak power greater than 100MW and a frequency between 1GHz and 300GHz. Since the first high-power microwave source appeared in the early 1970s, high-power microwave source technology has developed rapidly due to its wide application requirements in civil and military fields. [0003] Frequency tunability is one of the important development directions of high-power microwave sources, and has important application value in the fields of industry and national defense. The frequency tuning methods of high-power microwave sources mainly include electrical tuning and mechanical tuning. Electrical ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/46H01J23/26H01J23/027
Inventor 葛行军张军樊玉伟贺军涛袁成卫李志强张强王海涛钱宝良钟辉煌
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com