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A technology of light-emitting diodes and electrodes, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems affecting the light output rate of light-emitting diodes, etc.

Active Publication Date: 2016-04-13
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the refractive index of the semiconductor is greater than that of air, most of the near-field evanescent light waves from the active layer are confined inside the light-emitting diode until they are completely absorbed by the material in the light-emitting diode, which affects the light extraction rate of the light-emitting diode.

Method used

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Embodiment Construction

[0046] Embodiments and specific embodiments of the semiconductor structure, the light emitting diode and the manufacturing method thereof provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0047] see figure 1 , the first embodiment of the present invention provides a semiconductor structure 10, which includes a substrate 110, a buffer layer 116, a first semiconductor layer 120, an active layer 130, a second semiconductor layer 140, a third optically symmetrical layer 150 , a metal plasma generation layer 160 , a fourth optically symmetrical layer 170 , a first optically symmetrical layer 180 and a second optically symmetrical layer 190 . The buffer layer 116, the first semiconductor layer 120, the active layer 130, the second semiconductor layer 140, the third optically symmetrical layer 150, the metal plasma generation layer 160, the fourth optically symmetrical layer 170, the first optically symmetrical layer 18...

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Abstract

The present invention involves a kind of emitting diode, which includes: the first half of the conductor layer, which has the first and second surface of the first half of the conductor;The second surface of the first half of the conductor layer, the first surface of the first half of the conductor layer; the second electrode is connected to the electrical connection of the second semiconductor layer;Set on the side of the second semiconductor layer away from the side of the first half of the conductor; the first optical symmetry layer is set on the side of the metal plasma production layer to stay away from the side of the first half.The difference between the refractive index between the rate and the base is less than equal to 0.1.The light -emitting diode provided by the present invention has a good output effect.

Description

technical field [0001] The invention relates to a light emitting diode. Background technique [0002] High-efficiency blue, green, and white light-emitting diodes made of gallium nitride semiconductor materials have remarkable features such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on the N-type semiconductor layer. The N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/44
CPCH01L33/22H01L33/44H01L33/58
Inventor 朱钧张淏酥李群庆金国藩范守善
Owner TSINGHUA UNIV