Method for preventing doping ions from outgassing in process of ion implantation

A technology of doping ions and ion implantation, applied in the field of ion implantation, can solve the problems of electrical performance failure, change of silicon substrate resistance value, affecting the doping concentration of silicon substrate, etc., to achieve improved performance, excellent barrier properties and stability. , Guaranteed the effect of resistance value and electrical performance

Inactive Publication Date: 2014-01-01
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

[0002] The dopant ions (such as B, P) in the silicon substrate are prone to outgassing during the high-temperature annealing process, which affects the doping concentration in the silicon substrate, resulting in changes in the resistance value of the silicon substrate, and at the same tim...

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  • Method for preventing doping ions from outgassing in process of ion implantation

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Embodiment Construction

[0019] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0020] like figure 1 As shown, firstly, doping ions are implanted on the silicon substrate, and ion doping is performed in the area of ​​the silicon substrate that needs to be doped to obtain a doped silicon substrate; then a layer of doped silicon substrate is deposited on the surface of the doped silicon substrate Amorphous carbon film, using plasma-enhanced chemical vapor deposition process to deposit a layer of amorphous carbon film with a thickness ranging from 100A to 10000A on a doped silicon wafer substrate at a temperature range of 200 ° C to 500 ° C; followed by annealing treatment, in During the annealing process, the doped silicon substrate with the amorphous carbon film is placed in N 2 or Ar or He for...

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Abstract

The invention relates to a method for preventing doping ions from outgassing in the process of ion implantation. The method comprises the following steps that firstly, doping ions are implanted on a silicon substrate, so that a doping silicon substrate is obtained; secondly, a layer of amorphous carbon film deposits on the surface of the doping silicon substrate; thirdly, annealing treatment is conducted on the doping silicon substrate obtained in the second step; fourthly, the amorphous carbon film on the surface of the doping silicon substrate is eliminated; fifthly, the doping silicon substrate is washed. The layer of amorphous carbon film deposits on the surface of the doping silicon substrate, and due to the fact that the amorphous carbon film is good in barrier property and stability, the amorphous carbon film can effectively prevent the doping ions from generating the outgassing phenomenon when the thermal annealing technology is conducted. Therefore, the phenomenon that due to the fact that no silicification metal stop layer is arranged in a doping area in the process of annealing, the outgassing phenomenon is caused is effectively avoided. Therefore, the resistance value and the electrical properties of the doping silicon substrate are guaranteed, and then the performance of a product is improved.

Description

technical field [0001] The invention relates to an ion implantation method, in particular to a method for avoiding outgassing of ion implantation doped ions. Background technique [0002] The dopant ions (such as B, P) in the silicon substrate are prone to outgassing during the high-temperature annealing process, which affects the doping concentration in the silicon substrate, resulting in changes in the resistance value of the silicon substrate, and at the same time The diffused dopant ions will enter the regions that do not need to be doped. As the performance of the device is further improved, the electrical performance of the corresponding area will fail, and it is urgent to solve the outgassing of dopant ions in the silicon substrate. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for avoiding outgassing of doped ions in ion implantation. [0004] The technical scheme of the present invention to ...

Claims

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Application Information

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IPC IPC(8): H01L21/265
CPCH01L21/26506H01L21/02008
Inventor 洪齐元黄海
Owner WUHAN XINXIN SEMICON MFG CO LTD
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