Method for preventing doping ions from outgassing in process of ion implantation

Abstract

The invention relates to a method for preventing doping ions from outgassing in the process of ion implantation. The method comprises the following steps that firstly, doping ions are implanted on a silicon substrate, so that a doping silicon substrate is obtained; secondly, a layer of amorphous carbon film deposits on the surface of the doping silicon substrate; thirdly, annealing treatment is conducted on the doping silicon substrate obtained in the second step; fourthly, the amorphous carbon film on the surface of the doping silicon substrate is eliminated; fifthly, the doping silicon substrate is washed. The layer of amorphous carbon film deposits on the surface of the doping silicon substrate, and due to the fact that the amorphous carbon film is good in barrier property and stability, the amorphous carbon film can effectively prevent the doping ions from generating the outgassing phenomenon when the thermal annealing technology is conducted. Therefore, the phenomenon that due to the fact that no silicification metal stop layer is arranged in a doping area in the process of annealing, the outgassing phenomenon is caused is effectively avoided. Therefore, the resistance value and the electrical properties of the doping silicon substrate are guaranteed, and then the performance of a product is improved.

Description

technical field [0001] The invention relates to an ion implantation method, in particular to a method for avoiding outgassing of ion implantation doped ions. Background technique [0002] The dopant ions (such as B, P) in the silicon substrate are prone to outgassing during the high-temperature annealing process, which affects the doping concentration in the silicon substrate, resulting in changes in the resistance value of the silicon substrate, and at the same time The diffused dopant ions will enter the regions that do not need to be doped. As the performance of the device is further improved, the electrical performance of the corresponding area will fail, and it is urgent to solve the outgassing of dopant ions in the silicon substrate. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for avoiding outgassing of doped ions in ion implantation. [0004] The technical scheme of the present invention to ...

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Problems solved by technology

[0002] The dopant ions (such as B, P) in the silicon substrate are prone to outgassing during the high-temperature annealing process, which affects the doping concentration in the silicon substrate, resulting in changes in the resistance value of the silicon substrate, and at the same time The diffused dopant ions will enter the area that does not need to be doped

With the further improvement of the performance of the device, the electrical performance of the corresponding area will be invalidated, and it is urgent to solve the outgassing of dopant ions in the silicon substrate.

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