A kind of preparation method of three-dimensional porous carbon/nano NiO composite material

A composite material and nanotechnology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of increased volume expansion, material loss of activity, low conductivity, etc., to prevent damage and improve Conductivity and stability, the effect of structural stability

Inactive Publication Date: 2016-01-13
SHANDONG UNIV OF TECH
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Problems solved by technology

[0036] At present, the main factors affecting the performance of NiO negative electrode materials are: NiO is a semiconductor with low electrical conductivity; lithium ions enter the lattice of NiO during repeated cycles, resulting in large lattice distortion, which is caused by lattice distortion. Increased volume expansion
Agglomeration of NiO particles can occur, causing the material to lose activity

Method used

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  • A kind of preparation method of three-dimensional porous carbon/nano NiO composite material
  • A kind of preparation method of three-dimensional porous carbon/nano NiO composite material
  • A kind of preparation method of three-dimensional porous carbon/nano NiO composite material

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Embodiment Construction

[0060] Below in conjunction with specific embodiment, further illustrate the present invention.

[0061] A method for preparing a three-dimensional porous carbon / nano-NiO composite material, characterized in that the method comprises the following steps:

[0062] Step 1, preparation of nano-NiO

[0063] Nano-NiO powder was prepared by sol-gel method, with nickel acetate as nickel source, citric acid as chelating agent, the concentration of nickel acetate was 0.6mol / L, the molar ratio of nickel acetate to citric acid was 1:1, dissolved in 50ml ethylene glycol, using 40% HNO 3 The pH of the solution was adjusted to 1, the temperature was raised to 80°C, and the heating rate was 5°C / min, the solution was evaporated to 1 / 3 of the total amount to obtain a green transparent sol, and vacuum-dried at 130°C for 12 hours to obtain a green xerogel, which was transferred to Baking at 600-800°C for 2-5 hours in a muffle furnace. Grinding to obtain nanometer NiO powder.

[0064] Step 2,...

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Abstract

The invention relates to a method for preparing a three-dimensional hole carbon / nano NiO composite. The method is used for preparing a high capacity nano NiO composite to improve the electrochemical performance of a NiO electrode. The composite is formed through cladding the high capacity nano NiO with a stably structured carbon material with high conductivity, appropriate three-dimensional holes are formed around the nano NiO particles, so that the NiO expands and shrinks within a surrounding small zone during the electrode reaction, and the electrode structure is stable.

Description

technical field [0001] The invention relates to a preparation method of a three-dimensional porous carbon / nanometer NiO composite material. Background technique [0002] The currently prepared NiO electrode materials include powder materials and thin film materials, and the most common method for preparing NiO powder materials is the chemical precipitation method. In the chemical precipitation method, through different reactants and reaction conditions, adding surfactants, using templates, etc., NiO particles with different shapes can be prepared, including nanosheets, nanorods, nanowires, nanotubes, nanometers, etc. Spherical etc. For example, X.Y.Deng et al. [5] prepared NiO nanoparticles with an average particle size of 9 nm by ammonia co-precipitation method, and studied the competitive equilibrium relationship between complexation and precipitation reactions in solution. J.Y.Qi et al [6] prepared hexagonal NiO nanosheets with a thickness of 20-50nm and a width of 45-1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/36H01M4/52B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01M4/366H01M4/523H01M4/625H01M10/052Y02E60/10
Inventor 张丽鹏于先进穆洁尘董涛王倩楠杨李娜
Owner SHANDONG UNIV OF TECH
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