The invention relates to the technical field of MOS (
Metal Oxide Semiconductor) semiconductors, and discloses a
voltage-withstanding
MOSFET (
Metal Oxide Semiconductor Field Effect Transistor) device for high-load shutdown of a
robot dog and a preparation method thereof, the
voltage-withstanding
MOSFET device comprises a plurality of parallel MOS cells, and each MOS
cell comprises a drain
electrode, a
semiconductor epitaxial layer, a source
electrode and a grid
electrode; the
semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer, and a lightly doped N layer is arranged in the middle of the N drift layer of each MOS
cell; laterally symmetrical L-type P-
layers with inclined tops and arc-shaped opposite side tops are introduced to the two sides of an N drift layer, and in cooperation with the middle buffering effect of a lightly doped N layer, local
electric field concentration at the edge of the N drift layer in a traditional device can be accurately dispersed; the arc-shaped and L-shaped contours defined by the photoetching process can effectively guide the
electric field to be uniformly distributed, so that the breakdown risk caused by too strong local
electric field is avoided.