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A 1t1r array applied in fpga based on rram and its manufacturing method

A technology of 1T1R and manufacturing method, which is applied in the field of 1T1R array and its manufacturing, and can solve problems such as single logic function and inability to complete complex logic functions.

Active Publication Date: 2016-05-11
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the existing 1T1R array can realize a single logic function and cannot complete complex logic functions, the present invention provides a 1T1R array based on RRAM applied in FPGA and its manufacturing method

Method used

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  • A 1t1r array applied in fpga based on rram and its manufacturing method
  • A 1t1r array applied in fpga based on rram and its manufacturing method
  • A 1t1r array applied in fpga based on rram and its manufacturing method

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Embodiment 1

[0053] In order to solve the problem that the existing 1T1R array can realize a single logic function and cannot complete complex logic functions, this embodiment provides a 1T1R array based on RRAM applied in FPGA, which is applied to devices such as storage devices. The 1T1R array includes:

[0054] Logic circuit, used to realize the set logic function;

[0055] A signal input circuit is connected to the logic circuit and provides signals for the logic circuit;

[0056] a signal output circuit for outputting the signal of the logic circuit;

[0057] The logic circuits are connected in parallel.

[0058] The invention can set the logic circuit as required, and realize complex logic functions through the connection relationship between the logic circuit and the signal output circuit.

[0059] In practice, power supply and current limiting resistors are also included for specific applications. The power supply is used to provide electric energy for the logic circuit; the cu...

Embodiment 2

[0064] This embodiment and Embodiment 1 belong to the same inventive concept. This embodiment provides a method for manufacturing a 1T1R array based on RRAM applied in FPGA, the method includes the following steps, such as figure 2 Shown:

[0065] S1: preparing a logic circuit;

[0066] S2: preparing a signal input circuit and a signal output circuit;

[0067] In practice, logic circuits, signal input circuits and signal output circuits can be fabricated on one substrate.

[0068] S3: Correspondingly connecting the signal input circuit and the signal output circuit to the logic circuit. The corresponding connection refers to connecting the signal input circuit, the signal output circuit and the logic circuit as required, so that the signal output circuit outputs the required signal.

[0069] In practice, the logic circuit is usually prepared first, and then the signal input circuit and signal output circuit are prepared. by image 3 As an example, the logic circuit prepar...

Embodiment 3

[0081] The present invention will be described in detail below through an actual scene.

[0082] figure 1 It is the structure diagram of 1T1R unit in the present invention including two 1T1R, wherein, Vdd is the power supply; r is the current limiting resistor; OUT1, OUT2, OUT3, OUT4 are the output terminals of the signal output circuit; m11, m21, m31, m41, m12 , m22, m32, m42 are resistive variable resistors.

[0083] figure 1 In, the output terminal can form the following logic according to the input A, B signal and RRAM on-off, such as OUT 1 = m 11 ‾ · m 12 ‾ + m 11 ‾ · m 12 · B ‾ + m 12 ‾ ...

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PUM

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Abstract

The invention provides an RRAM (Resistive Random Access Memory)-based 1T1R (1 Transistor and 1 RRAM) array applied to an FPGA (Field Programmable Gate Array) and a manufacturing method thereof and belongs to the technical field of information storage. The 1T1R array comprises logical circuits, signal input circuits and signal output circuits, wherein the logical circuits are used for realizing set logic functions; the signal input circuits are connected with the logical circuits and are used for supplying signals to the logical circuits; the signal output circuits are used for outputting signals of the logical circuits; the logical circuits are in parallel connection with one another. According to the array and the manufacturing method thereof, the logical circuits can be set as required, and complicated logic functions are realized based on the connection between the logical circuits and the signal output circuits.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a 1T1R array applied in FPGA based on RRAM and a manufacturing method thereof. Background technique [0002] Resistive random access memory (hereinafter referred to as RRAM) is a new type of non-volatile memory manufactured by resistance change, which has the characteristics of fast speed (<5ns), low operating voltage (<1V), high storage density, and good integration. It has great potential to become the next generation of semiconductor memory. RRAM devices generally have a metal-insulator-metal structure, by adding a dielectric film material with resistive switching characteristics between two layers of conductive metal, such as common nickel oxide (NiO), titanium oxide (TiO 2 ), hafnium oxide (HfO 2 ), zirconia (ZrO 2 ), tungsten oxide (WO 3 ), tantalum oxide (Ta 2 o 5 ) and other metal oxide materials, by applying a voltage across the conductive metal, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/177H01L21/8247
Inventor 刘力锋王逸然陈冰王琰韩德栋王漪刘晓彦康晋锋
Owner PEKING UNIV
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