Microcosmic area charge injecting and quantitative analysis method in nanometer silicon floating gate structure

Abstract

The invention provides a microcosmic area charge injecting and quantitative analysis method in a nanometer silicon floating gate structure. By means of an atomic force microscope and a Kelvin detection method, charge injecting of the nanometer silicon floating gate structure is achieved. The nanometer silicon floating gate structure is of a silicon carbide structure or a nanometer silicon structure or a silicon carbide sandwich structure. In a tapping mode of the atomic force microscope, a sample silicon substrate additionally exerts bias voltage of positive 3V and negative 3V on a conductive probe of the atomic force microscope, the surface of the nanometer silicon floating gate structure on the sample silicon substrate is scanned, and charge injecting is achieved. After charge injecting, the atomic force microscope is immediately switched to a surface potential mode from the tapping mode, and in the surface potential mode, a surface potential signal of a sample is obtained through two steps of scanning and the Kelvin detection method. The charge injecting is quantitatively researched through static electric field analysis and numerical calculation, and the charge injecting quantity can be obtained through the static electric field analysis and the numerical calculation.

Description

1. Technical field: [0001] The invention proposes a new method for realizing microscopic region charge injection and quantitative detection in a nanometer silicon floating gate structure by using an atomic force microscope (AFM) and a Kelvin probe. 2. Background technology: [0002] The research on the charge injection of nano-silicon at the microscopic level, especially the quantitative research, is an important basis for in-depth understanding of the physical properties of silicon-based materials and improving the state performance of silicon-based devices. However, traditional electrical tests such as C-V tests can only obtain the macroscopic properties of the sample, and cannot further understand its microscopic electrical effects. In recent years, atomic force microscopy and its Kelvin detection extension mode are being increasingly used in the characterization of the morphology and surface potential of semiconductor materials and device microscopic regions, but in the ...

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Problems solved by technology

However, in the existing research work, the surface potential signal is only used as an indirect information of the injected charge, and there is a lack of analysis of the quantitative relationship between the surface potential and the number of injected charges.

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