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Method for reducing splashing of silicon liquid in polycrystalline silicon electron beam smelting process

An electron beam smelting, polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of ablation of components, loss of silicon materials, ablation of vacuum chamber shells, etc., to reduce ablation, Reduce the loss of silicon material and avoid the effect of sudden pressure change

Inactive Publication Date: 2014-02-12
QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In short, the impact of splashing is the loss of a large amount of silicon material on the one hand, and the ablation of the vacuum chamber shell and even the components inside the vacuum chamber on the other hand.
At the same time, the generated spatter will bring inconvenience to the regular cavity cleaning work

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1. Material preparation: first take 500g of polysilicon material, wash it with deionized water 4 times, and put it in a drying oven at 60°C for drying.

[0027] 2. Vacuum and pretreatment: Use a vacuum pump set to evacuate the electron beam melting furnace to 0.0018Pa; water-cool the bottom of the water-cooled copper crucible and maintain the temperature at 40℃; set the high pressure to 30kV, and turn off the high pressure after preheating for 5 minutes. , The beam current of the electron gun is set to 200mA. After the electron gun is warmed up for 10 minutes, the beam current of the electron gun is turned off.

[0028] 3. Adjust the beam spot movement of the electron beam: adjust the beam current of the electron gun to 100mA and measure it with an infrared thermometer. After keeping the surface temperature of the silicon material irradiated by the electron beam at 1420℃, start heating to melt the silicon material.

[0029] Adjust the moving speed of the electron beam spot to ...

Embodiment 2

[0034] 1. Material preparation: first take 500g of polysilicon material, wash it with deionized water 4 times, and put it in a drying oven at 60°C for drying.

[0035] 2. Vacuum and pretreatment: Use a vacuum pump set to evacuate the electron beam melting furnace to 0.0018Pa; water-cool the bottom of the water-cooled copper crucible and maintain the temperature at 40℃; set the high pressure to 30kV, and turn off the high pressure after preheating for 5 minutes. , The beam current of the electron gun is set to 200mA. After the electron gun is warmed up for 10 minutes, the beam current of the electron gun is turned off.

[0036] 3. Adjust the beam spot movement of the electron beam: adjust the beam current of the electron gun to 180mA and measure it with an infrared thermometer. After keeping the surface temperature of the silicon material irradiated by the electron beam at 1500℃, start heating to melt the silicon material.

[0037] Adjust the moving speed of the electron beam spot to ...

Embodiment 3

[0042] 1. Material preparation: first take 500g of polysilicon material, wash it with deionized water 4 times, and put it in a drying oven at 60°C for drying.

[0043] 2. Vacuum and pretreatment: Use a vacuum pump set to evacuate the electron beam melting furnace to 0.0018Pa; water-cool the bottom of the water-cooled copper crucible and maintain the temperature at 40℃; set the high pressure to 30kV, and turn off the high pressure after preheating for 5 minutes. , The beam current of the electron gun is set to 200mA. After the electron gun is warmed up for 10 minutes, the beam current of the electron gun is turned off.

[0044] 3. Adjust the electron beam spot movement: adjust the electron gun beam current to 150mA, measure it with an infrared thermometer, keep the surface temperature of the silicon material irradiated by the electron beam at 1470℃, then start heating to melt the silicon material.

[0045] Adjust the moving speed of the electron beam spot to 15mm / s, and move it spiral...

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PUM

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Abstract

The invention belongs to the field of electron beam smelting, and in particular relates to a method for reducing the splashing of silicon liquid in a polycrystalline silicon electron beam smelting process. The method comprises the steps of material preparation, vacuumizing, pretreatment and smelting, wherein after the pretreatment step, the following steps are performed: (1) adjusting electron beam current, and heating and melting a silicon material; (2) adjusting electron beam spots to spirally move towards the circle center of a crucible along the upper edge of the inner wall of the crucible, causing the electron beam spots to reversely spirally move after the electron beam spots move to the circle center of the crucible, and repeating the spiral movement; (3) after the movement of the electron beam spots is completed, performing electron beam smelting. The method has the remarkable effects that silicon material loss caused by the splashing of the silicon liquid can be reduced, ablation in a vacuum cavity can be reduced, the hidden danger of stopping of an electron gun in case of sudden changes in pressure in the vacuum cavity caused by the splashing of the silicon liquid can be avoided, and a process is simple and easy to operate.

Description

Technical field [0001] The invention belongs to the field of electron beam smelting, and particularly relates to a method for reducing silicon liquid splash during the polysilicon electron beam smelting process. Background technique [0002] In a society where energy is scarce and low-carbon and environmentally friendly, solar energy has great application value as a new environmentally friendly energy source. Solar cells can convert solar energy into electricity. Solar-grade polysilicon materials are the most important basic raw materials for manufacturing solar cells. However, their high manufacturing costs and complex manufacturing processes are bottlenecks that restrict the development of the photovoltaic industry and seriously hinder the development of solar cells in my country. Promotion and use. [0003] At present, the main technical routes for preparing solar-grade polysilicon materials worldwide are: modified Siemens method, silane method, and metallurgical method. The pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
Inventor 王登科姜大川谭毅
Owner QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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