Preparation method of CuO/CoTiO3 composite air-sensitive film

A thin-film and gas-sensing technology, which is applied in the field of preparation of CuO/CoTiO3 composite gas-sensing thin film, can solve the problem of high working temperature of the sensor, and achieve the effects of improving sensitivity, lowering working temperature and uniform distribution of components

Active Publication Date: 2014-02-12
SHAANXI UNIV OF SCI & TECH
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both "chemisorption" and "redox reaction", which play a key role in this process, require high temperature activation, so the operating temperature of the sensor is relatively high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of CuO/CoTiO3 composite air-sensitive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1) To analyze pure TiO 2 and Co 3 o 4 As raw material, mixed with binder respectively, pre-fired at 50MPa, 200°C to prepare TiO 2 Target and Co 3 o 4 target, and the TiO 2 Target and Co 3 o 4 Put the target material into the two RF target positions of the magnetron sputtering apparatus respectively, and put the Cu target with a purity of 99.99% into the DC sputtering target position;

[0017] 2) Put the clean Si substrate on the coating sample stage of the magnetron sputtering instrument, install a baffle between the target and the substrate of the magnetron sputtering instrument, and pump the coating chamber and the sample chamber through the vacuum system Vacuum, when the vacuum degree reaches 1.0×10 -4 At Pa, the coating chamber is fed with Ar gas, and the Ar gas flow is controlled at 10sccm-30sccm, so that the pressure in the coating chamber and the sample chamber is 0.2Pa;

[0018] The Si substrate was first ultrasonically cleaned in absolute ethanol for 1...

Embodiment 2

[0022] 1) To analyze pure TiO 2 and Co 3 o 4 As raw material, mixed with binder respectively, pre-fired at 80MPa, 500℃ to prepare TiO 2 Target and Co 3 o 4 target, and the TiO 2 Target and Co 3 o 4 The target material is placed in two radio frequency target positions of the magnetron sputtering apparatus, and the Cu target with a purity of 99.99% is placed in the DC sputtering target position;

[0023] 2) Put the clean Si substrate on the coating sample stage of the magnetron sputtering instrument, install a baffle between the target and the substrate of the magnetron sputtering instrument, and pump the coating chamber and the sample chamber through the vacuum system Vacuum, when the vacuum degree reaches 5×10 -4At Pa, the coating chamber is fed with Ar gas, and the Ar gas flow rate is controlled at 10sccm-30sccm, so that the pressure in the coating chamber and the sample chamber is 1Pa;

[0024] The Si substrate was first ultrasonically cleaned in absolute ethanol fo...

Embodiment 3

[0027] 1) To analyze pure TiO 2 and Co 3 o 4 As raw material, mixed with binder respectively, pre-fired at 100MPa, 700°C to prepare TiO 2 Target and Co 3 o 4 target, and the TiO 2 Target and Co 3 o 4 Put the target material into the two RF target positions of the magnetron sputtering apparatus respectively, and put the Cu target with a purity of 99.99% into the DC sputtering target position;

[0028] 2) Put the clean Si substrate on the coating sample stage of the magnetron sputtering instrument, install a baffle between the target and the substrate of the magnetron sputtering instrument, and pump the coating chamber and the sample chamber through the vacuum system Vacuum, when the vacuum degree reaches 9.9×10 -4 At Pa, the coating chamber is fed with Ar gas, and the Ar gas flow rate is controlled at 10sccm-30sccm, so that the pressure of the coating chamber and the sample chamber is 2Pa;

[0029] The Si substrate was first ultrasonically cleaned in absolute ethanol f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a preparation method of a CuO / CoTiO3 composite air-sensitive film. The method comprises the following steps: respectively putting a TiO2 target and a Co3O4 target into two radio-frequency target positions of a magnetron sputtering instrument, and putting a Cu target into a direct current sputtering target; putting a Si substrate into a coating sample stage of the magnetron sputtering instrument, vacuumizing a coating chamber and a sample chamber by virtue of a vacuum system, and introducing Ar gas into the coating chamber so as to enable the pressure intensity in the coating chamber and the sample to be 0.2-2Pa; setting the power source power of the two radio-frequency targets as 100-400W, enabling the mol ratio of sputtered Ti and Co atoms to 1:(0.5-2) and meanwhile regulating the power of a direct current target to be 20-200W; sputtering for 10-90 minutes; then putting a precursor film obtained by sputtering into a muffle furnace, controlling the calcination temperature at 400-700 DEG C, calcinating for 0.5-3 hours and performing furnace cooling so as to obtain a final product. According to the preparation method, activation energy of an adsorption link and an oxidation-reduction reaction link are used for realizing room-temperature air sensitivity of a semiconductor. The preparation method is high in reaction efficiency and good in film-forming property.

Description

technical field [0001] The invention relates to a preparation method of a composite gas-sensitive thin film, in particular to a CuO / CoTiO which can exhibit excellent sensitivity to ethanol gas at room temperature 3 A method for preparing a composite gas-sensitive film. Background technique [0002] Cobalt titanate (CoTiO 3 ) is a compound oxide p-type semiconductor material with excellent physical, chemical, photoelectric and other properties, and can be widely used in electronic components, electroplating, sensitive probes, catalysts and other fields. Since Xingqin Liu from University of Science and Technology of China first discovered CoTiO in 1999 3 The gas sensitivity of nanocrystals So far, researchers have continuously improved its sensitive parameters by doping and changing the sensor structure. As of now, CoTiO 3 to 40ppm C 2 h 5 The sensitivity of OH gas has exceeded 60, the selectivity S 40ppmC2H5OH / S 25ppm propylene Reaching 6.6, the response time and rec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/35C23C14/08
Inventor 卢靖张亚宾黄剑锋曹丽云
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap