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Thin film deposition apparatus and method for using deposited thin film

A thin film deposition and equipment technology, applied in the field of thin film deposition equipment, can solve problems such as defects

Inactive Publication Date: 2014-02-12
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when a thin film is deposited on an organic layer using a sputtering device, defects occur on the organic layer

Method used

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  • Thin film deposition apparatus and method for using deposited thin film
  • Thin film deposition apparatus and method for using deposited thin film
  • Thin film deposition apparatus and method for using deposited thin film

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Embodiment Construction

[0021] It will be understood that when an element or layer is referred to as being "on," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer , directly connected to or directly coupled to another element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like elements refer to like elements throughout. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0022] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be referred to by these terms. limit. These terms are only used to di...

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PUM

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Abstract

A thin film deposition apparatus (500) includes a process chamber that includes a reaction space, a plasma generating unit (200), and a sputtering unit (100). The plasma generating unit (200) generates a plasma (PM) in the reaction space. The sputtering unit (100) is independently driven from the plasma generating unit (200) to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma. The plasma can be generated by an induction field or by electron cyclone resonance.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2012-0085848 filed on Aug. 6, 2012, the contents of which are hereby incorporated by reference. technical field [0002] The present disclosure relates to a thin film deposition apparatus and a method of depositing a thin film using the same. More particularly, the present disclosure relates to a thin film deposition apparatus capable of depositing a thin film using material sputtered from a target, and a method of depositing a thin film on a substrate using the thin film deposition apparatus. Background technique [0003] Generally, a sputtering apparatus applies a bias voltage to an anode and a cathode provided in a chamber to form an electric field, and supplies an inert gas affected by the electric field into the chamber to form plasma. Ions in the plasma are accelerated by the electric field and collide with the target to sputter the target. In this case, the bias voltage applied to the anode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/46C23C14/12
CPCH01J37/3405H01J37/32311C23C14/35H01J37/32174C23C14/354H01J37/321H01J37/3444C23C14/34
Inventor 李侑钟
Owner SAMSUNG DISPLAY CO LTD