Ternary tungsten boride nitride films and methods for forming same

Abstract

Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses.

Description

[0001] Cross References to Related Cases [0002] This application claims priority under 35 USC § 119(e) to U.S. Provisional Patent Application No. 61 / 676,123, filed July 26, 2012, and U.S. Provisional Patent Application, filed September 6, 2012 No. 61 / 676,775. Both applications are hereby incorporated by reference in their entirety. Background technique [0003] Resistivity is an intrinsic property of a material and is a measure of a material's resistance to the movement of charges through that material. Materials with high or low resistivity are used for different applications. For example, low-resistivity metal layers in integrated circuits minimize power loss. The high-resistivity metal layer can be used as a heater element for phase-change memory or other applications. [0004] In one example, the tungsten layer can be used for low-resistivity electrical connections in the form of horizontal interconnects, vias between adjacent metal layers, and contacts between the f...

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For example, low-resistivity metal layers in integrated circuits minimize power loss

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