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High electron mobility transistor and manufacturing method thereof

A high electron mobility, transistor technology, used in the field of high electron mobility transistors and the formation of high electron mobility transistors

Active Publication Date: 2014-02-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite the many noteworthy properties mentioned above, there are many challenges in the development of devices based on III-V semiconductor compounds

Method used

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  • High electron mobility transistor and manufacturing method thereof
  • High electron mobility transistor and manufacturing method thereof
  • High electron mobility transistor and manufacturing method thereof

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Embodiment Construction

[0028] The making and using of illustrative embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the invention.

[0029] According to one or more embodiments of the present disclosure, a semiconductor structure includes a high electron mobility transistor (HEMT). A HEMT includes a heterojunction formed between two layers of different semiconductor materials, such as layers of materials with different bandgaps. In at least one example, a HEMT includes a first III-V compound layer (also referred to as a channel layer) formed on a substrate and a second III-V compound layer (also referred to as a channel layer) formed on the channel layer. body supply layer). The channel layer and the donor supply layer are compounds composed of III-V ...

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Abstract

A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. The second III-V compound layer has a top surface. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A fluorine region is embedded in the second III-V compound layer under the gate electrode. The fluorine region has a top surface lower than the top surface of the second III-V compound layer. A gate dielectric layer is disposed under at least a portion of the gate electrode and over the fluorine region.

Description

[0001] This application is related to commonly owned and co-pending patent serial number ____ (Attorney Docket TSM 12-0337) entitled "High Electron Mobility Transistor and Method of Forming the Same" filed by _____, the contents of which Incorporated herewith for reference. technical field [0002] The present invention relates generally to semiconductor structures and, more particularly, to high electron mobility transistors (HEMTs) and methods of forming high electron mobility transistors. Background technique [0003] In semiconductor technology, Group III-V (or III-V) semiconductor compounds are used due to their properties to form various integrated circuit devices, such as high-power field-effect transistors, high-frequency transistors, or high-electron-mobility transistors ( HEMT). HEMTs are field-effect transistors that, instead of doped regions commonly used in metal-oxide-semiconductor field-effect transistors (MOSFETs), will combine a junction between two materia...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/423H01L21/335
CPCH01L29/66H01L29/15H01L29/66462H01L29/7787H01L29/2003
Inventor 黄敬源游承儒姚福伟余俊磊陈柏智杨富智
Owner TAIWAN SEMICON MFG CO LTD
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