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A kind of LED chip cutting method

A cutting method and chip technology, applied in the direction of welding/welding/cutting objects, laser welding equipment, manufacturing tools, etc., can solve the problems of process control and production stability, and achieve wide application range, simple operation and high effect obvious effect

Active Publication Date: 2015-12-23
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to the higher and higher requirements for brightness and reliability of high-power chips, the technology of combining invisible cutting and back-coating reflective film on high-power chips has developed rapidly. Among them, the main process is to cut first and then evaporate the film. method, but since cutting marks have been formed inside the wafer, even if some methods are used to effectively reduce the fragmentation of the wafer during back plating, the fragmentation rate is still higher than that of ordinary wafers by 3%-5%. not desirable in terms of control and production stability

Method used

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  • A kind of LED chip cutting method

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Experimental program
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Effect test

Embodiment 1

[0039] Embodiment 1 comprises the following steps

[0040] (1) the back-plated Bragg reflection layer and metal of the wafer after grinding and polishing;

[0041] (2) stick the front side of the wafer on the sticky side of the white film;

[0042] (3) Carry out low-power ordinary cutting according to conventional methods, and the cutting depth shall not exceed 10 μm;

[0043] (4) Take out the chip;

[0044] (5) Put the wafer into the invisible cutting machine, adjust the cutting line to coincide with the line cut by the ordinary cutting machine during preview, and perform invisible cutting according to the conventional method;

[0045] (6) After cutting, paste the Mylar film for routine splitting to obtain sample 1.

Embodiment 2

[0046] Embodiment 2 combines the common laser of 355nm and the stealth cutting laser of 1064 as an example, including the following steps:

[0047] (1) Place the ordinary laser cutter in the invisible cutting machine;

[0048] (2) Fix the ordinary laser head and the invisible cutting laser head on the same movement axis;

[0049] (3) Set the power of ordinary laser to 0.2-1.0W, and the power of stealth cutting laser to 0.1-0.5W;

[0050] (4) Bragg reflection layer and metal are plated on the back of the polished wafer;

[0051] (5) stick the front side of the wafer on the sticky side of the white film;

[0052] (6) cutting according to conventional methods;

[0053] (7) After cutting, paste the Mylar film for routine splitting to obtain sample 2.

Embodiment 3

[0054] Embodiment 3 comprises the following steps

[0055] (1) stick the wafer backside that is ground and polished on the sticky side of the white film;

[0056] (2) The protective solution: H 2 After mixing in the ratio of O=1:8, apply it evenly on the front side of the wafer.

[0057] (3) Carry out low-power ordinary cutting according to conventional methods, and the cutting depth shall not exceed 10 μm;

[0058] (4) Take out the chip;

[0059] (5) Put the wafer into the invisible cutting machine, adjust the cutting line to coincide with the line cut by the ordinary cutting machine during preview, and perform invisible cutting according to the conventional method;

[0060] (6) After cutting, paste the Mylar film for routine splitting to obtain sample 3.

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Abstract

The invention discloses an LED wafer cutting method. An LED wafer is provided, and low-power common cutting laser and invisible cutting laser simultaneously act on the same LED wafer. Processes for evaporation of wafers with various film layers and invisible cutting are fundamentally combined, so that the wafer breaking problem caused by cutting marks due to cutting when the film layers undergo evaporation is avoided. The LED wafer cutting method is simple to operate, obvious in effect, and high in efficiency when two coaxial laser heads are used at the same time.

Description

technical field [0001] The invention relates to the technical field of LED chip production, in particular to a method for cutting an LED chip. Background technique [0002] The most mature LED cutting technology is ordinary laser cutting. Generally speaking, the wavelength of the laser is 355nm or 266nm. Its characteristic is that it can not only cut the sapphire substrate, but also cut various film layers. Such as GAN layer, Bragg reflection layer, metal layer, etc. [0003] The LED cutting technology that has appeared in recent years is stealth laser cutting, which is characterized in that it can penetrate the sapphire substrate, form energy pores in the middle layer of sapphire, and burst the pores to achieve the purpose of cutting. It reduces the laser burnt area on the side of the wafer, thereby reducing the light loss of the wafer. This method can increase the brightness of the wafer by 5-10%. However, since the laser wavelength is 1064nm, it is penetrating the GAN la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/38B23K26/60
CPCB23K26/38B23K26/40B23K26/60B23K2103/50
Inventor 曾莹赵鑫刘为刚欧阳桃
Owner XIANGNENG HUALEI OPTOELECTRONICS