Epitaxial wafer, its production method and super junction power device
A technology of power devices and production methods, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as electrical failure, low collapse voltage of super-junction power devices, and failure to meet the use requirements, etc., to improve collapse The effect of uniform distribution of voltage and charge
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Embodiment 1
[0058] The epitaxial wafer is circular in shape. Cut along the thickness direction, the cross-sectional view is as follows Figure 4 As shown, an N-type substrate 1 and an N-type first epitaxial layer 2 are included. A single crystal silicon layer 5 is disposed between the N-type substrate 1 and the N-type first epitaxial layer 2 .
[0059] Its production steps include: Figure 4 As shown, an N-type substrate 1 is provided; the back of the N-type substrate 1 is oxidized to form an oxide layer 7; the edge of the oxide layer 7 is etched to a width L of 2 mm. A single crystal silicon layer 5 is deposited on the N-type substrate 1 ; the single crystal silicon layer 5 is arranged between the N-type substrate 1 and the N-type epitaxial layer 2 . The single crystal silicon layer 5 has a thickness of 4 μm. The single crystal silicon layer 5 is formed by the reaction of trichlorosilane and hydrogen at 1040° C. and deposited on the surface of the substrate 1 . A first epitaxial lay...
Embodiment 2
[0064] The production method is different from that of Example 1 in that the single crystal silicon layer 5 is formed by the reaction of trichlorosilane and hydrogen at 1045° C. and deposited on the surface of the substrate 1 . All the other structures and production methods are the same as in Example 1.
[0065] Such as Figure 9 Shown is the resistivity distribution diagram of the epitaxial layer of the epitaxial wafer produced in this embodiment. From Figure 9 It can be seen that the resistivity of the first epitaxial layer 2 is distributed concentrically. From the center of the circle, the resistivity non-uniformity of the first 30mm annular zone is 1.1%. The resistivity non-uniformity of the second 30mm annular zone is 1.2%. The resistivity non-uniformity of the third 30mm annular zone is 3.8%.
[0066] Figure 10 Shown is the electrical test diagram of the super-junction power device produced by using the epitaxial wafer in Example 2, and the black solid circle in...
Embodiment 3
[0068] The production method is different from that of Example 1 in that the single crystal silicon layer 5 is formed by the reaction of trichlorosilane and hydrogen at 1050° C. and deposited on the surface of the substrate 1 . All the other structures and production methods are the same as in Example 1.
[0069] Such as Figure 11 Shown is the resistivity distribution diagram of the epitaxial layer of the epitaxial wafer produced in this embodiment. From Figure 11 It can be seen that the resistivity of the first epitaxial layer 2 is distributed concentrically. From the center of the circle, the resistivity non-uniformity of the first 30mm annular zone is 1.0%. The resistivity non-uniformity of the second 30mm annular zone is 1.2%. The resistivity non-uniformity of the third 30mm annular zone is 3.7%.
[0070] Figure 12 Shown is the electrical test diagram of the super junction power device produced by using the epitaxial wafer in Example 3, and the black solid circle ...
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