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A kind of growth device and growth method of LBO crystal

A growth method and crystal growth technology, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of low utilization rate of large-diameter LBO crystals, reduce the risk of LBO shedding, facilitate manufacturing, and reduce device cost. The effect of cutting difficulty

Active Publication Date: 2016-08-03
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the defects in the prior art that it is difficult to produce large-diameter LBO crystals and the crystal utilization rate is not high, the present invention aims at the demand for large-diameter LBO crystal devices in a specific direction, and improves the existing crystal growth device. The purpose is to provide a A kind of growth device of LBO crystal

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  • A kind of growth device and growth method of LBO crystal

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Embodiment 1

[0034] Such as figure 1 As shown, the main body of the crystal growth device of this embodiment is a crucible with an open upper end and a closed bottom, and a convex portion is provided on the bottom of the crucible, and the convex portion is a structure with a closed top, which is fixed on the crucible by welding or other means. bottom.

[0035] As an optional technical solution, the convex portion may be any structure with a closed top, and its top may be a closed tip or a plane of any shape.

[0036] As an optional technical solution, the convex part can be in any shape, such as regular or irregular columns, cones, etc., and its cross-section can be circular, elliptical, square, and any polygon; It can be any combination of structures, for example, a sheet structure of any shape is fixed on the bottom of the crucible by a fixing rod to form an umbrella-like structure, etc.

[0037] As an optional technical solution, the convex part may be a solid structure or a hollow st...

Embodiment 2

[0040] 947.04 grams of Li of pure grade will be analyzed 2 CO 3 , 1584.58 g H 3 BO 3 , 1230.04 grams M O o 3 with 441.72 g of ZnF 2 Grind in an agate grinder, mix evenly and put it into a crystal growth device, the size of the external platinum crucible of the growth device is The inner convex part is a cylinder (dimensions ). Put the aforementioned growth device into a vertical resistance wire single crystal growth furnace, seal the top opening of the furnace with a cover made of insulating material, and leave a small hole in the middle of the cover corresponding to the center of the crucible for the seed rod to enter and exit. Heat up to 900°C at a heating rate of about 80°C / h, stir at this temperature for 12 hours with a stirrer made of platinum sheet, lift out the stirrer, and slowly cool to 660°C. Then run the seed to find the exact saturation point temperature. Then put the official seed crystal on the surface of the melt at about 2-5°C above the saturation po...

Embodiment 3

[0042]1415.78 grams of Li of pure grade will be analyzed 2 CO 3 , 1780.13 g H 3 BO 3 , 2763.65 grams M O o 3 with 992.45 g of ZnF 2 Grind in an agate grinder, mix evenly and put it into a crystal growth device, the size of the external crucible of the growth device is The convex part in the crucible is a right cone (the size is 90mm in diameter at the bottom, 70mm in diameter at the top, and 100mm in height). Put the above growth device into a vertical resistance wire single crystal growth furnace, seal the top opening of the furnace with a cover made of insulation material, and leave a small hole in the middle of the cover corresponding to the center of the crucible for the seed rod to enter and exit. Heat up to 1000°C at a heating rate of about 60°C / h to completely melt the above crucible material, then use a stirrer made of platinum sheet to stir at this temperature for 48 hours. Cool to 680°C, then put in the trial seed crystal to find the exact saturation point te...

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Abstract

The invention relates to a growing device of a lithium triborate (LBO) crystal. The growing device comprises a crucible and a convex part which is arranged on the inner bottom of the crucible. The invention also relates to a growing method of the LBO crystal. Growth of the LBO crystal is carried out by adopting the growing device. The growing device provided by the invention is simple in structure, simple and convenient to manufacture, and low in cost. By adopting the growing device and the growing method provided by the invention, large-caliber flat LBO single crystal can be directly grown, the cutting difficulty of a crystal apparatus is reduced, the utilization rate of the crystal is obviously improved, the processing link is reduced, the growth period of the crystal is shortened, and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a growth device for growing lithium triborate (LBO) crystals and a corresponding growth method. Background technique [0002] Lithium triborate (LiB 3 o 5 , referred to as LBO) single crystal is an excellent nonlinear optical material. It has a large enough nonlinear coefficient, can achieve phase matching at room temperature, does not deliquesce, has stable chemical properties, and moderate hardness, especially because of its large laser damage threshold, phase matching allowable angle, and wide light transmission range. nonlinear crystals. At present, it has been widely used in the field of solid-state laser frequency conversion. [0003] LBO is a melting compound with different components. Its growth mainly adopts high temperature solution top seed crystal method, top seed crystal pulling method, crucible rotation method, etc. [0004] With the technological breakthroug...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B35/00
Inventor 胡章贵岳银超赵营涂衡
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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