Laser simulation single particle effect back irradiation test method for memory circuit

Abstract

The invention discloses a laser simulation single particle effect back irradiation test method for a memory circuit. The method comprises the following the steps: 1) hollowing the position at which a memory chip is adhered to a circuit board to be tested; 2) fixedly placing a memory circuit test sample on a three-dimensional translation platform, driving the three-dimensional translation platform, focusing pulse laser emitted from an external laser to the back surface of the memory chip after the pulse laser passes through a lens, and fixing the memory circuit test sample at the position in a vertical direction; 3) driving the three-dimensional platform to move, and scanning the memory circuit test sample in a two-dimensional plane; 4) monitoring the input and the output of the memory chip by using an FPGA (field programmable gate array), finding out and recording data errors and erroneous data addresses generated by data flip of the memory chip caused by the pulse laser. According to the method, the position of an error can be positioned accurately without an infrared camera.

Description

technical field [0001] The invention relates to a research and analysis method for the anti-space single event effect capability of semiconductor devices. Background technique [0002] Spacecraft are exposed to cosmic rays, particles in the Earth's radiation belt, and atmospheric neutrons in space. The total dose effect and single event effect will be produced when spaceborne devices are exposed to radiation. With the reduction of the feature size of the semiconductor process, the single event effect of the device becomes more and more significant. Carrying out the research and analysis of the single event effect of aerospace electronic devices is of great significance for prolonging the life of satellites and improving the reliability of integrated circuits. [0003] In order to ensure the safe and reliable flight of space vehicles, it is necessary to conduct ground simulation of single event effects on aerospace electronic devices to evaluate the performance of single ev...

AI Technical Summary

Problems solved by technology

The exact position of a specific functional unit cannot be found during backside irradiation, so it is difficult to obtain the pulse laser response characteristics of sensitive nodes in the circuit, and it is also difficult to analyze the influence of sensitive node layout factors of the circuit layout on the performance of single particles. The single-event sensitivity of the

When the laser is focused on the back surface during back irradiation, the spot will diverge and become larger when irradiating through the substrate of the device to the active area. Therefore, to obtain a small spot, the laser must be focused on the active area of ​​the device, which is different from the device substrate. Thickness is dependent, making testing difficult

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