Cleaning method capable of improving quality of oxide layer

An oxide layer and quality technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of weak removal ability of precious metal impurities such as Cu, introduction of contamination of precious metal impurities such as Cu, maintenance of equipment spare parts, etc., and achieve reduction Erosion effect, improvement of oxide layer quality, wide application effect

Inactive Publication Date: 2014-03-26
无锡中微晶园电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these cleaning processes are relatively weak in removing Cu and other precious metal impurities. At the same time, due to the development and diversification of the process, many small process lines use multiple process processing platforms at the same time, which can easily lead to Cu and other precious metal impurities. introduce
Although advanced

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1: A cleaning method that can improve the quality of the oxide layer, including the following process steps:

[0013] (1) The silicon wafers before the oxide layer growth process are cleaned in DHF1 acid mixture for 20 seconds, and the cleaning temperature is 23℃. DHF1 acid mixture is composed of HF and H 2 O is obtained by mixing at a mass ratio of 1:20; after cleaning with DHF1 acid mixture, the silicon wafers are rinsed with deionized water circulation; using DHF1 acid mixture cleaning can peel off the surface oxide layer or natural oxide layer of the silicon wafer in a small amount, effectively removing part of the silicon Chips and metal impurities such as Al, Fe, Zn, and Ni, but with the removal of the natural oxide layer, the surface of the silicon wafer becomes hydrophobic, and the surface is easy to adsorb Cu and other precious metal impurities;

[0014] (2) Wash the silicon wafers in the APM acid mixture for 4 minutes, the cleaning temperature is 75 ℃, th...

Embodiment 2

[0017] Embodiment 2: A cleaning method that can improve the quality of the oxide layer, including the following process steps:

[0018] (1) The silicon wafer before the oxide layer growth process is cleaned in DHF1 acid mixture for 30 seconds, the cleaning temperature is 21℃, and the DHF1 acid mixture is composed of HF and H 2 O is obtained by mixing at a mass ratio of 1:30; after cleaning with DHF1 acid mixture, the silicon wafers are circulated and rinsed with deionized water;

[0019] (2) Wash the silicon wafers in the APM acid mixture for 6 minutes, the cleaning temperature is 65℃, and the APM acid mixture is made of NH 4 OH, H 2 O 2 And H 2 O is obtained by mixing at a mass ratio of 1:2:15; after cleaning with the APM acid mixture, the silicon wafers are rinsed with deionized water circulation;

[0020] (3) Then the silicon wafers are cleaned in the SPM acid mixture for 6 minutes, the cleaning temperature is 100 ℃, the SPM acid mixture is made of H 2 SO 4 And H 2 O 2 It is obtain...

Embodiment 3

[0022] Embodiment 3: A cleaning method that can improve the quality of the oxide layer, including the following process steps:

[0023] (1) The silicon wafer before the oxide layer growth process is cleaned in DHF1 acid mixture for 25 seconds, and the cleaning temperature is 22℃. DHF1 acid mixture is composed of HF and H 2 O is obtained by mixing at a mass ratio of 1:25; after cleaning with DHF1 acid mixture, the silicon wafers are circulated and rinsed with deionized water;

[0024] (2) Wash the silicon wafers in the APM acid mixture for 5 minutes, the cleaning temperature is 70℃, and the APM acid mixture is made of NH 4 OH, H 2 O 2 And H 2 O is obtained by mixing with a mass ratio of 1:2:13; after cleaning with the APM acid mixture, the silicon wafers are rinsed with deionized water circulation;

[0025] (3) Then wash the silicon wafer in the SPM acid mixture for 5 minutes, the cleaning temperature is 105 ℃, the SPM acid mixture is made of H 2 SO 4 And H 2 O 2 It is obtained by mixi...

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PUM

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Abstract

The invention relates to a cleaning method capable of improving the quality of an oxide layer. The cleaning method is characterized by comprising the following steps that (1) a silicon wafer used before a growth process of the oxide layer is cleaned in DHF1 acid mixed liquor which is obtained by mixing HF and H2O of which the mass ratio is 1:20-30, and then the silicon wafer is washed cleanly with deionized water; (2) the silicon wafer is cleaned in APM acid mixed liquor which is obtained by mixing NH4OH, H2O2 and H2O of which the mass ratio is 1:2:12-15, and then the silicon wafer is washed cleanly with deionized water; (3) the silicon wafer is cleaned in SPM acid mixed liquor which is obtained by mixing H2SO4 and H2O2 of which the mass ratio is 3:1, and then the silicon wafer is washed cleanly with deionized water; (4) finally, the silicon wafer is cleaned in DHF2 acid mixed liquor which is obtained by mixing HF and H2O2 of which the mass ratio is 1:20-25, and then the silicon wafer is dried after being washed cleanly with deionized water. According to the cleaning method, conventional semiconductor equipment is adopted, and Cu and other precious metal impurities can be removed effectively.

Description

Technical field [0001] The invention relates to a cleaning method for silicon wafers before an oxide layer production process, in particular to a cleaning method that can improve the quality of the oxide layer. Background technique [0002] Looking at the development of semiconductor technology today, the critical dimensions of circuits are getting smaller and smaller, and the requirements for the quality of the oxide layer are getting higher and higher. As we all know, there are many factors that affect the quality of the oxide layer, but the impact of metal impurities has always been the key object of prevention and control in the process line oxidation process, because the contamination of metal impurities will cause a significant drop in oxide layer breakdown and an increase in leakage current. Traditional methods such as RCA, SC-1, SC-2 and other cleaning processes before oxidation growth can effectively remove the contamination effects of metal impurities. However, these c...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/0206
Inventor 陶军张继吴晓鸫寇春梅
Owner 无锡中微晶园电子有限公司
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