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Structure to increase resistance to electromigration

A technology of electromigration and dielectric layer, applied in the field of resistance structure, can solve the problems of reducing metal diffusion rate and improving metal layer resistance

Active Publication Date: 2014-03-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, these techniques for reducing the metal diffusion rate significantly increase the resistance of the metal layer

Method used

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  • Structure to increase resistance to electromigration
  • Structure to increase resistance to electromigration
  • Structure to increase resistance to electromigration

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Embodiment Construction

[0055] The making and using of some embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0056] The invention is described below for an implementation in a specific context, using one or more solder balls, microbumps, metal pillars (eg, copper pillars), copper studs, gold studs, or combinations thereof. However, the present disclosure can also be applied to various packages in the semiconductor industry. It can be understood that the following disclosure provides many different implementations or examples for realizing different features. Specific examples of components or arrangements are described below to simplify the present disclosure. Of course, these are only examples ...

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Abstract

A semiconductor device includes a recess in a polymer layer between two adjacent metal lines and over passivation layer or anti-electromigration layers on redistribution metal lines to increase the resistance to electromigration. Also disclosed is a structure to increase resistance to electromigration.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly, to structures that increase resistance to electromigration. Background technique [0002] Reliability issues such as Highly Accelerated Temperature / Humidity Stress Test (HAST) failures, increased electromigration, and stress migration become more severe as the minimum feature size of semiconductor devices shrinks and the spacing between adjacent metal lines decreases. Shrinking device dimensions and reducing metal pitch and width lead to increased resistance and current density. Increased current density can increase the rate at which the metal grows metallic dendrites, which can reduce the spacing between adjacent metal lines and eventually cause short circuits. [0003] One way to prevent the occurrence of interconnect failures due to such shorts is to increase the metal spacing. Increasing the metal pitch is not practical as devices will continue to shri...

Claims

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Application Information

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IPC IPC(8): H01L23/485H01L21/60
CPCH01L24/13H01L2224/11334H01L2224/13155H01L23/485H01L2224/1146H01L2224/13144H01L24/11H01L2224/13101H01L2224/13181H01L2224/13147H01L2224/13166H01L2224/1147H01L2224/11462H01L2224/13111H01L23/3114H01L23/3192H01L23/525H01L23/53223H01L23/53238H01L23/53266H01L23/5329H01L2224/02351H01L2924/014H01L2924/00014
Inventor 陈宪伟郭宏瑞
Owner TAIWAN SEMICON MFG CO LTD
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