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A light-emitting diode flip chip with improved light extraction rate and preparation method thereof

A light-emitting device and electrode technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unsatisfactory electrical conductivity and heat dissipation performance, and achieve the effect of improving luminous efficiency and increasing the reflection area

Active Publication Date: 2017-06-06
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the connection between the substrate and the chip is only through a limited number of gold balls, and the electrical conductivity and heat dissipation performance are not ideal.

Method used

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  • A light-emitting diode flip chip with improved light extraction rate and preparation method thereof
  • A light-emitting diode flip chip with improved light extraction rate and preparation method thereof
  • A light-emitting diode flip chip with improved light extraction rate and preparation method thereof

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Embodiment Construction

[0028] The present invention proposes a light-emitting diode flip-chip structure with improved light extraction rate, including a sapphire substrate, an InGaAlN multilayer structure formed on the sapphire substrate, and the InGaAlN multilayer structure includes an N-type GaN layer from bottom to top, The active layer and the P-type GaN layer, the Ag layer formed on the P-type GaN layer to remove the edge of the device, the protective metal layer formed on the surface of the Ag layer, etch on the surface of the protective metal layer until the N-type The N electrode hole formed by the GaN layer, the metal N electrode formed in the N electrode hole, the passivation layer formed on the protective metal layer, the passivation layer formed between the side wall of the N electrode hole and the metal N electrode, It also includes a metal reflection layer formed on the edge of the device, the metal reflection layer on the edge of the device is located between the P-type GaN layer and t...

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Abstract

The invention discloses a light emitting diode flip chip with improved light extraction rate and a preparation method thereof, which are used for improving the light extraction rate of the chip and improving the light efficiency. The invention proposes that a metal reflective layer is arranged on the edge region of the light emitting diode not covered by the Ag reflective layer, so that more light emitted by the active layer is reflected and then emitted through the sapphire substrate, thereby improving the luminous efficiency of the device. The invention is mainly applied to the sapphire substrate LED flip chip.

Description

technical field [0001] The invention relates to the technology of light-emitting diodes, in particular to the technology of LED flip chip with sapphire substrate. Background technique [0002] At present, high-power and high-brightness LEDs have become the focus of the development of the LED industry and are widely used in indoor and outdoor lighting. Considering that the conductivity of the P-type GaN layer is not high in traditional front-mounted sapphire-substrate high-power chips, it is necessary to deposit a semi-transparent Ni / Au conductive layer on the upper surface of the P-type layer to make the current more evenly distributed. The current diffusion layer will absorb Part of the light reduces the light efficiency, and the low thermal conductivity of sapphire leads to high thermal resistance of the chip. In order to overcome the above disadvantages, a flip chip has been proposed. The traditional flip-chip structure is just to invert the ordinary LED chip on the sub...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10
CPCH01L33/382H01L33/405
Inventor 彭翔赵汉民张璟
Owner LATTICE POWER (JIANGXI) CORP