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Array substrate, manufacturing method thereof, and display device

A technology of array substrate and manufacturing method, which is applied in the display field, can solve the problems of difficult etching, incomplete etching, and legacy of crystalline ITO, achieve good isolation effect, and reduce the effect of performance impact

Active Publication Date: 2016-08-17
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when etching the ITO layer to form a pixel electrode pattern, it is difficult to etch the crystalline ITO, such as image 3 As shown, the etching is often incomplete. In the area 7, the ITO film will be retained to form an electrode, and in the area 5, the ITO film will be removed to expose the passivation layer below. However, the etching difficulty of crystalline ITO is greater than that of normal ITO. It is difficult to etch, and in the peripheral area 6 of area 7, there will still be ITO grains left
If there are too many ITO crystal grains left in the peripheral area 6 of area 7, the pixel electrodes of adjacent pixels will be electrically connected, which will seriously affect the electrical performance of the array substrate and increase the uncontrollability of the overall performance of the array substrate, which will eventually affect The display effect of the display device

Method used

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  • Array substrate, manufacturing method thereof, and display device
  • Array substrate, manufacturing method thereof, and display device
  • Array substrate, manufacturing method thereof, and display device

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Embodiment Construction

[0038] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0039] Embodiments of the present invention aim at the problem in the prior art that the etching residue around the conductive pattern will affect the performance of the display device, and provide an array substrate, a manufacturing method thereof, and a display device, which can ensure the integrity of the conductive pattern after etching. There is no residue at the periphery, which reduces the impact of etching residue on the performance of the display device.

[0040] An embodiment of the present invention provides a method for manufacturing an array substrate, such as Figure 4 As shown, this embodiment includes:

[0041] Step 101: Before making the conductive pattern, use the mask plate for making the conductive pattern to patte...

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Abstract

The invention provides an array substrate, a manufacturing method thereof, and a display device, belonging to the field of display technology. The manufacturing method of the array substrate includes: before making the conductive pattern, patterning the insulating layer under the conductive pattern by using a mask for making the conductive pattern; depositing a conductive layer, and using the mask for making the conductive pattern to pattern the The conductive layer is patterned to form the conductive pattern. Through the technical solution of the present invention, it can be ensured that there is no residue around the conductive pattern after etching, and the influence of etching residue on the performance of the display device is reduced.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] During the production process of LCD (Liquid Crystal Display, Liquid Crystal Display) array substrate and OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) array substrate, uneven etching of conductive patterns will affect the display performance of the array substrate, for example Array substrates often use indium tin oxide (ITO) to make pixel electrodes, but when depositing ITO, it is easy to form ITO crystals due to the temperature rise caused by long-term sputtering, and this phenomenon becomes more obvious as the thickness of the ITO film increases. The etching of crystalline ITO is relatively difficult, so when the ITO thin film is subsequently etched to form the pattern of the pixel electrode, ITO residues are likely to occur. [0003] Such as ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1248H10K59/124
Inventor 孙宏达陈海晶
Owner BOE TECH GRP CO LTD