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Solution method used for preparing cesium tin triiodide thin films

A cesium tin triiodide, solution method technology, applied in chemical instruments and methods, inorganic chemistry, tin compounds, etc., can solve problems such as CSI samples cannot be carried out, and achieve the effect of reducing costs

Active Publication Date: 2014-04-09
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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  • Abstract
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Problems solved by technology

However, the measurement of optical and electrical transport properties has not been possible due to the lack of high-quality CSI samples

Method used

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  • Solution method used for preparing cesium tin triiodide thin films
  • Solution method used for preparing cesium tin triiodide thin films
  • Solution method used for preparing cesium tin triiodide thin films

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Experimental program
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Embodiment

[0036] Solution Synthesis of Polycrystalline CsSnI 3 The film steps are as follows:

[0037] The solution of the precursor material is synthesized under ambient conditions, and the ambient conditions refer to: room temperature or temperature of 298.15K (or 25°C, 77°F); absolute pressure of 100kPa (or 14.504psi, 0.986atm).

[0038] The concrete preparation method of CsI solution is as follows:

[0039] 12 grams of CsI powder with a purity of 99.9% was added to 30 grams of deionized water to form a 28.6 wt% (weight percent) CsI solution. The CsI powder was completely dissolved in deionized water, and the CsI solution was stirred for 30 minutes. Under ambient conditions, the CsI solution is colorless and stable, and more CsI powder can be added to the deionized aqueous solution of CsI until saturated, the solution is colorless, and the CsI powder can be dissolved in water less than its own mass without obvious break down.

[0040] It is also possible to select a solvent other ...

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Abstract

The invention provides a solution method used for preparing cesium tin triiodide (CsSnI3) thin films. The solution method comprises following steps: S11, a CsI solution is prepared, wherein the concentration of the CsI solution ranges from 5 to 50wt%; S12, a SnCl2 solution is prepared, wherein the concentration of the SnCl2 solution ranges from 10 to 80wt%; S12, the CsI solution and the SnCl2 solution are mixed so as to obtain a cesium tin triiodide solution; S14, substrates are coated with the cesium tin triiodide solution dropwise; and S15, the substrates are heated to be dried, so that the cesium tin triiodide thin films are formed on the substrates. According to the method used for preparing the cesium tin triiodide (CsSnI3) thin films via dropwise adding, the thin films can be synthesized on the substrates with a large area, such as glass, ceramic, and metallic foil; the CsSnI3 thin films can be synthesized without vacuum processing; cost is reduced significantly; and the CsSnI3 thin films can be widely used as a novel solar cell absorption material.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a method for a cesium tin triiodide thin film by solution method. Background technique [0002] cesium tin iodide CsSnI 3 The study of (CSI) compounds began in 1974, and Scaife et al. carried out structural analysis of powdered CSI for the first time. Several years later, research groups such as Mauersberger and Huber independently synthesized and calibrated yellow needle-like CSI microcrystals. But it was not until 1991 that the CSI polycrystal was discovered by Yamada et al.: the polycrystal is called black CSI because of its black luster. Black CSI is obtained by phase transition of yellow CSI crystallites heated above 425K. Through the X-ray analysis of the structure and crystal phase in different temperature regions, three different crystal structures were determined: the black CSI crystal presents an ideal cubic perovskite structure (α phase) at 450K, and i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00C03C17/22C04B41/85
Inventor 沈凯陈琢任宇航
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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