External resonator semiconductor laser element and optical element
A technology of external resonators and laser components, which is applied in the field of optical components and external resonator-type semiconductor laser components, and can solve the problems of low luminous efficiency and low luminous efficiency
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Embodiment 1
[0024] Figure 1A A plan view of an external resonator type semiconductor laser element according to Example 1 is shown. The external resonator type semiconductor laser element includes a semiconductor optical amplifier 20 and an optical circuit 30 .
[0025] As the semiconductor optical amplifier 20, for example, an InP-based optical amplifier is used. The InP-based semiconductor optical amplifier 20 is designed to have a maximum gain around 1.55 μm. One end face (exit end face) of the semiconductor optical amplifier 20 is combined with the optical circuit 30 , and the other end face (reflection end face) is formed with a high reflection film 21 . The optical waveguide 22 in the semiconductor optical amplifier 20 is inclined 7° toward the in-plane direction of the substrate with respect to the normal line of the output end surface. By inclining the optical waveguide 22 with respect to the output end surface, it is possible to suppress the light reflected on the output end s...
Embodiment 2
[0061] Figure 9 A plan view of an optical element according to Example 2 is shown. The optical element according to the second embodiment includes a laser unit 50 , a modulation unit 60 , and a multiplexing unit 70 . The laser section 50 includes four external resonator type laser elements 50A, 50B, 50C, and 50D. Each external resonator type laser element 50A, 50B, 50C, 50D has a Figure 1A The external resonator-type laser elements of the illustrated embodiment 1 have the same structure, and only the dimensions of the respective elements are different. That is, each external resonator type laser element 50A, 50B, 50C, 50D includes a semiconductor optical amplifier 20 and an optical circuit 30 . The optical circuits 30 of the four external resonator-type laser elements 50A, 50B, 50C, and 50D are formed on the same substrate 80 .
[0062] The radii Ra, Rb, Rc, and Rd of the annular waveguides 35 of the external resonator laser elements 50A, 50B, 50C, and 50D are different f...
Embodiment 3
[0076] Figure 11 A plan view of an optical element according to Example 3 is shown. Hereinafter, differences from Embodiment 2 will be described, and descriptions of the same configurations will be omitted. In Example 2, the output light from the laser unit 50 is modulated by the modulation unit 60 and then multiplexed by the multiplexing unit 70 . In Example 3, the output light from the laser unit 50 is first multiplexed by the multiplexing unit 70 . Modulation is performed by the changing unit 60 after multiplexing.
[0077] The configurations of the laser unit 50 and the multiplexing unit 70 are the same as the configurations of the laser unit 50 and the multiplexing unit 70 based on the optical element of the second embodiment. The modulation unit 60 is composed of four all-pass ring modulators 60A, 60B, 60C, and 60D connected in cascade. The radii of the all-pass ring modulators 60A, 60B, 60C, and 60D are the same as the radii Ra, Rb, Rc, and Rd of the ring waveguide...
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