Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quaternary liquid metal heat interface material with dual melting points

A thermal interface material, liquid metal technology, applied in metal layered products, layered products, chemical instruments and methods, etc., can solve problems such as high fluidity and short circuit, and achieve the effect of broad application prospects.

Active Publication Date: 2014-04-16
NINGBO SYRNMA METAL MATERIALS CO LTD
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regrettably, liquid metals are too fluid when operating at high temperatures, which can lead to short circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quaternary liquid metal heat interface material with dual melting points
  • Quaternary liquid metal heat interface material with dual melting points
  • Quaternary liquid metal heat interface material with dual melting points

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] For the quaternary liquid metal thermal interface material composed of In-Bi-Sn-Zn, the composition of the upper and lower layers is selected as In0.50-0.18Bi-0.24Sn-0.08Zn (mole fraction). The material of the middle layer is In0.33-0.26Bi-0.29Sn-0.12Zn (mole fraction). The alloy prepared according to this formula is melted in a vacuum induction furnace and prepared into a three-layer foil structure. The thickness of the upper and lower layers is 0.01mm. The thickness of the intermediate layer was 0.03 mm. Then the three-layer foil-like alloy material is combined into a liquid metal thermal interface material with a sandwich structure, with a melting point of about 100 °C, as figure 1 shown. They are upper and lower layers (a) with lower melting point and middle layer (b) with higher melting point, respectively. The present invention selects elements with sufficient chemical compatibility with the materials of the heating element and the radiator from the periodic tab...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a quaternary liquid metal heat interface material with dual melting points. The liquid metal heat interface materials adopt a three-layered foil-shaped structure, wherein the upper layer and the lower layer are made of 50% of indium, 18% of bismuth, 24% of tin and 8% of zinc by mole; the middle layer is made of 33% of indium, 26% of bismuth, 29% of tin and 12% of zinc by mole. A hole between a heating element and a radiator can be completely filled with the quaternary liquid metal heat interface material at a relatively low temperature after initial mounting, and then the quaternary liquid metal heat interface material is solidified due to diffusion. The quaternary liquid metal heat interface material is solid at normal working temperatures. When the temperature of an electronic device is raised to a design value, the quaternary liquid metal heat interface material can be melted twice to cool the electronic device sharply. Therefore, the quaternary liquid metal heat interface material has a wide application prospect.

Description

technical field [0001] The invention relates to a liquid metal thermal interface material, in particular to a quaternary liquid metal thermal interface material with double melting point characteristics. Background technique [0002] With the development of highly integrated electronic chips, the heating power of the entire electronic device is increasing, and the operating temperature of different components has risen sharply. The operating temperature of an electronic device directly determines its service life and stability. Devices operating at high temperatures will greatly reduce the service life of electronic devices. To make electronic devices work within a reasonable temperature range, in addition to ensuring that the working environment temperature is within a reasonable range, it is also necessary to effectively dissipate heat from the electronic devices. The problem of heat dissipation has become a key technical bottleneck in the development of microelectronic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/01C22C30/06
Inventor 曹帅刘亚军曹贺全
Owner NINGBO SYRNMA METAL MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products