Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoelectric functional structure unit and production method and application thereof

A structural unit and multi-functional technology, applied in the direction of electrical components, etc., can solve the problems of approaching the physical limit of micro-machining technology, low recording density, slow reading and writing speed, etc.

Active Publication Date: 2014-04-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although flash memory is non-volatile, there are technical obstacles such as slow read and write speeds and low recording density, and it is also facing the problem that the physical limit of micro-processing technology is approaching

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric functional structure unit and production method and application thereof
  • Photoelectric functional structure unit and production method and application thereof
  • Photoelectric functional structure unit and production method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In this embodiment, the structure of the photoelectric multifunctional structural unit is as follows figure 1 As shown, it consists of electrode one, electrode two, and a dielectric layer between electrode one and electrode two. The first electrode uses a heavily doped Si substrate, the dielectric layer uses a cerium oxide film with a thickness of 80nm, and the second electrode uses an ITO electrode.

[0028] The photoelectric multifunctional structural unit mentioned above is prepared by coating method, as follows:

[0029] Step 1: Ultrasonic clean the heavily doped Si substrate with acetone for 10 minutes, then ultrasonically clean it with ethanol for 10 minutes after taking it out, and then ultrasonically clean it with deionized water for 10 minutes to remove surface impurities; then blow it with nitrogen Dry, soak in 10% HF solution for 120 seconds to remove the oxide layer on the surface, ultrasonically clean with acetone for 10 minutes after taking out, ultrasoni...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a photoelectric functional structure unit. The light emitting performance is combined on the basis of an electrical resistance structure unit and accordingly the electrical resistance of the structure unit changes, meanwhile the light emitting state changes correspondingly, and accordingly the novel multifunctional structure unit is achieved, wherein the resistance change and the light change of the novel multifunctional structure unit are integrated into a whole. The information storage can be performed through the resistance change, the information display can be performed through the change of the light emitting state, and accordingly the photoelectric functional structure unit can be applied to the information storage field, the electric write-in and light read-out type intelligent storage is achieved, and a new thought is provided for the storage field. Meanwhile the information storage can be performed through the resistance change, the information transmission can be performed through the change of the light emitting state, and accordingly the photoelectric functional structure unit can be applied to a photoelectric communication and photoelectric interconnected system.

Description

technical field [0001] The invention relates to the fields of electroresistance conversion technology and light-emitting technology, in particular to a multifunctional structural unit and a preparation method thereof, which can be applied to fields such as information storage and information communication. Background technique [0002] With the rapid development of digital high-tech, people put forward more demands on the functions of existing electronic information products, such as miniaturization, low cost, low power consumption, high capacity, high speed, multi-function and so on. At the same time, integrated circuits have also developed rapidly, and their applications are becoming more and more extensive. Electronic systems are being combined with more and more other systems, and various multi-functional systems have been bred to meet people's growing demand for electronic information products. high demand. [0003] One of the weaknesses of the current mainstream DRAM ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 李润伟檀洪伟刘钢朱小健
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com