IGBT module suitable for electric vehicle inverter, packaging method and usage method

Abstract

The invention discloses an IGBT module suitable for an electric automobile inverter. A collecting electrode of an IGBT chip is welded with a first copper block, of which thickness is greater than length of a short side of the IGBT chip. An emitting electrode of the IGBT chip is led out via a second copper block. A control electrode is led out via a binding wire. The second copper block is connected with a third copper block via a heat-conducting and conductive buffer layer with high heat conductivity. The invention also discloses a packaging method and an application method of the IGBT module. The IGBT module is pressed on a cooling plate via an insulating and heat-conducting gasket. The IGBT chip is mutually vertical to the cooling plate. Heat capacity is increased via increasing thickness of copper on the direct welding part of the IGBT, and a large amount of heat is absorbed in a short period of time by utilizing high heat conductivity and high heat capacity of copper so that transient heat resistance is reduced and peak value current capability is increased. Besides, heat resistance is reduced via heat diffusion of the copper layer, increment of heat-radiating area and double-surface cooling. Furthermore, the double-surface cooling is realized by utilizing one cooling plate so that mechanical structure complexity and cost are reduced.

Description

technical field [0001] The invention relates to electric vehicle driving inverter technology, in particular to an IGBT module, a packaging method and a use method of the IGBT module. Background technique [0002] In traditional industrial applications, there is no high requirement for the peak current capability of the IGBT module. However, when used in automobiles, in order to meet the needs of frequent short-term acceleration, the IGBT module is required to have a strong peak current capability. Usually 2s to 30s, the current capacity at this time is often 2 to 3 times or even higher than its rated capacity (or continuous current capacity). [0003] The structure of IGBT module in traditional industry is as follows: figure 1 As shown, the production process is relatively simple. First, the IGBT chip 1 is welded on the top copper layer 2 of the DBC (Direct bonded copper, copper-clad ceramic substrate, copper layer 2+insulating thermal pad (ceramic) 3+copper layer 2) , and...

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Problems solved by technology

The other is a double-sided cooling scheme, such as image 3 As shown, both sides of the IGBT chip 1 are welded on the DBC (copper layer 2 + insulating layer 3 + copper layer 2), and the thermal resistance is reduced by double-sided cooling, thereby improving the current capability of the IGBT module. The disadvantage of this structure The water-cooled mechanical system is more complicated, which increases the cost and reduces the reliability

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