Supercharge Your Innovation With Domain-Expert AI Agents!

ITO (indium tin oxide) grid line solar cell and preparation method thereof

A solar cell and grid line technology, applied in the field of solar cells, can solve the problems of reducing the effective light-receiving area of ​​solar cells and reducing the output power of a single cell, and achieve the effects of avoiding reflection and absorption, improving efficiency, and reducing costs

Active Publication Date: 2014-04-23
ZHONGSHAN DEHUA CHIP TECH CO LTD
View PDF8 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the opaque metal grid will reflect and absorb the incident light, thereby reducing the effective light-receiving area of ​​the solar cell, thereby reducing the output power of the single cell

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ITO (indium tin oxide) grid line solar cell and preparation method thereof
  • ITO (indium tin oxide) grid line solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The present invention will be further described below in conjunction with specific examples.

[0045] see figure 1 and figure 2 As shown, the ITO grid solar cell described in this embodiment is specifically a rectangular structure, including an anti-reflection film 1, crossing ITO grid lines 2, an epitaxial wafer 3, a back metal electrode 4, and a front metal electrode 5; wherein, the The anti-reflection film 1, intersecting ITO grid line 2, epitaxial wafer 3, and back metal electrode 4 are stacked sequentially from top to bottom; the front metal electrode 5 is correspondingly arranged on the epitaxial wafer 3, and is connected with the intersecting ITO grid line 2 is on the same side of the epitaxial wafer 3; the front metal electrode 5 surrounds the area formed by the intersecting ITO grid lines 2 (specifically figure 1 Circular area in ), and connect with it.

[0046] The intersecting ITO grid lines 2 are cross-crossing ITO grid lines, the width of which is 2-15 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ITO (indium tin oxide) grid line solar cell and a preparation method thereof. The ITO grid line solar cell comprises an antireflection film, crossed ITO grid lines, an epitaxial wafer, a back metal electrode and front metal electrodes. The antireflection film, the crossed ITO grid lines, the epitaxial wafer and the back metal electrode are stacked in sequence from top to bottom; the front metal electrodes are correspondingly arranged on the epitaxial wafer, and the front metal electrodes and the crossed ITO grid lines are located on the same side face of the epitaxial wafer; the front metal electrodes are arranged around an area formed by the crossed ITO grid lines, and connected with the area. According to the ITO grid line solar cell and the preparation method thereof disclosed by the invention, by adopting ITO as the grid lines of the solar cell, the reflection and the absorption of conventional metal grid lines to light can be well avoided, so that the area below the crossed ITO grid lines also can take part in light absorption, and photovoltaic conversion is performed, and therefore the efficiency of the solar cell is greatly improved. Meanwhile, the ITO is used as the grid lines instead of precious metals, such as gold, silver and the like, so that the cost can be greatly reduced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an ITO grid wire solar cell and a preparation method thereof. Background technique [0002] With the development of modern industry, the global energy crisis and air pollution problems have become increasingly prominent. As an ideal renewable energy source, more and more countries have paid attention to solar energy. Carrying out solar cell research and developing the photovoltaic power generation industry will contribute to the sustainable development of national energy. is of great significance. At present, the main problems faced by solar cells are low photoelectric conversion efficiency and low cost performance, which cannot meet the needs of large-scale civilian use. At present, the conversion efficiency of commercial monocrystalline silicon cells is about 16%-20%, and that of polycrystalline silicon cells is about 14%-16%. GaInP / GaAs / Ge triple-junction solar cells with...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0224H01L31/06H01L31/18
CPCY02E10/50H01L31/022425H01L31/022475H01L31/1884Y02P70/50
Inventor 张露张杨杨翠柏陈丙振万智丁杰王智勇吴步宁
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More