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A Method for Measuring Local Charge Distribution in Sonos Memory Using the Single Charge Technique

A technology of technology measurement and charge distribution, applied in static memory, read-only memory, information storage, etc., can solve problems such as difficult measurement of sub-threshold current and sub-threshold voltage, failure, and degradation of SONOS memory tolerance

Inactive Publication Date: 2016-01-20
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] As the process size shrinks, the equivalent model established by the sub-threshold slope characterization gradually fails, and the sub-threshold current and sub-threshold voltage become difficult to measure as the device size shrinks
[0009] SONOS memory endurance degradation due to device size reduction is getting worse

Method used

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  • A Method for Measuring Local Charge Distribution in Sonos Memory Using the Single Charge Technique
  • A Method for Measuring Local Charge Distribution in Sonos Memory Using the Single Charge Technique
  • A Method for Measuring Local Charge Distribution in Sonos Memory Using the Single Charge Technique

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Embodiment Construction

[0052] Select a batch of SONOS storage with the same model. The present invention takes a memory whose width and length are 90nm*90nm as an example.

[0053] First select a memory that has not been injected with overcharge, and change the source-drain voltage V DS size, measured for different V DS under the threshold voltage V TH , get V TH With V DS Variation in the distribution of V TH (V DS ) 0 .

[0054] Then use low-voltage channel hot electron injection (ChannelHotElectronInjection, CHEI) method for single-electron injection. The traditional CHE process uses V G and V DS Larger, a large number of electrons will be injected into the nitride storage layer in a short period of time. Unlike conventional CHE, the low-voltage CHEI process lowers the V G and V DS , reducing the probability of electron injection, so that a single electron injection into the storage layer occurs. After several experiments, the best low-voltage CHE process operating conditions for th...

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Abstract

The invention relates to a method for measuring local charge distribution in an SONOS (silicon oxide nitride oxide semiconductor) storage by utilizing a single charge technology. The method comprises the following steps: selecting an SONOS storage with non-injected charge, changing the size of source drain voltage V<DS>, and measuring the threshold voltage V of different V<DS>, to obtain the distribution of V along with the change of V<DS>; injecting single charge into a nitride storage layer of the SONOS storage through low-voltage charge injection process; injecting single charge into the SONOS storage to obtain the distribution of V along with V<DS> when V<DS> is larger than 0; obtaining Gaussian distribution function of threshold voltage delta V, caused by single charge injection, and channel position X by utilizing DIBL effect; counting the intensity A and half-peak breadth of the Gaussian distribution at different channel positions; measuring the threshold voltage change, caused by stored charge, of the to-be-measured SONOS storage; by utilizing single electron information, converting the sum of functions of threshold voltage change, caused by the single electron injection, at a sampling point X, thus finally obtaining the distribution of charges in the storage layer along with the channel direction.

Description

technical field [0001] The invention relates to a method for measuring the distribution of stored charges in a SONOS memory, in particular to measuring the distribution of local charges in a storage layer along the direction of a channel in a nanometer-sized SONOS memory by using a single-charge technique. Background technique [0002] Nowadays, non-volatile memory (flash) is widely used in various electronic products such as digital cameras, mobile phones and notebook computers. High-capacity, low-cost flash memory has become an urgent demand in the market. The traditional flash memory uses a polysilicon thin film floating gate structure, and its limitations are mainly related to the thickness of the tunneling dielectric layer of the device: on the one hand, the tunneling dielectric layer is required to be relatively thin to achieve fast and effective P / E operation; on the other hand, a 10-year The above data maintain performance. [0003] SONOS (Poly-Si / SiO 2 / Si 3 N ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
Inventor 纪小丽朱颖杰廖轶明圣迎晓闫锋
Owner NANJING UNIV