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GaAs pHEMT pipe core nonlinear model parameter extraction method

A nonlinear model and parameter extraction technology, applied in the microwave field, achieves the effect of less resource occupation, easy global optimal solution, and easy to obtain

Inactive Publication Date: 2014-05-07
ZHEJIANG UNIV
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Problems solved by technology

As the size of semiconductor devices is becoming smaller and smaller, the integration of MMIC will be higher and higher in the future. The traditional circuit design method based on experience can no longer meet the development requirements of the period, so accurate period Model will become one of the keys to circuit design

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  • GaAs pHEMT pipe core nonlinear model parameter extraction method
  • GaAs pHEMT pipe core nonlinear model parameter extraction method

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Embodiment Construction

[0027] The invention provides a method for extracting parameters of a nonlinear model of a GaAs pHEMT tube core. The method first figure 1 The equivalent circuit of the GaAs pHEMT die shown in is analyzed to extract the nonlinear component parameters. Then, based on the dimensions of the nonlinear and linear components in the equivalent circuit model, an applicable feed-forward neural network algorithm is designed to extract the parameters of the nonlinear model. Import the trained neural network into the CAD software to generate a nonlinear model of the GaAs pHEMT die to realize the simulation of large signals. The schematic diagram of the extraction process is as figure 2 As shown, its specific implementation is as follows:

[0028] (1) Analyze the equivalent circuit of the GaAs pHEMT die, extract the nonlinear component parameters, and establish a 5-layer feedforward neural network. It includes 1 input layer, 3 hidden layers and 1 output layer.

[0029] (2), the gate ...

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Abstract

The invention provides a GaAs pHEMT pipe core nonlinear model parameter extraction method. The method includes the steps of firstly, analyzing a GaAs pHEMT pipe core equivalent circuit and extracting nonlinear element parameters in the GaAs pHEMT pipe core equivalent circuit; secondly, designing a suitable feedforward type neural network algorithm according to the dimensions of nonlinear and linear elements in an equivalent circuit model, and conducting nonlinear model parameter extraction. The trained neural network is led into CAD software and then the GaAs pHEMT pipe core nonlinear model can be generated, and therefore simulation of large signals can be achieved. The GaAs pHEMT pipe core nonlinear model parameter extraction method integrates the data mining technology with the device equivalent circuit modeling technology, and is an effective parameter extraction method.

Description

technical field [0001] The invention belongs to the field of microwave technology, and in particular relates to a method for extracting parameters of a nonlinear model of a GaAs pHEMT tube core. Background technique [0002] In many fields of information technology, various devices based on semiconductor materials are almost ubiquitous in people's lives. They constantly change people's way of life and way of thinking, improve the quality of human life, and promote the progress of social civilization. The rapid development of semiconductor materials and the development of electronic products promote each other and cannot be separated. [0003] Gallium arsenide (GaAs) crystal is a compound semiconductor material with superior electrical properties. Semiconductor devices and integrated circuits based on it have outstanding advantages such as ultra-high frequency, low power consumption, and low noise, and are widely used. GaAs devices and their integrated circuits show their i...

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Application Information

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IPC IPC(8): G06F17/50G06N3/02
Inventor 王志宇王立平徐秀琴郁发新
Owner ZHEJIANG UNIV
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