Semiconductor structure with contact plug and formation method of semiconductor structure

Abstract

The invention discloses a semiconductor structure with a contact plug and a formation method of the semiconductor structure. The semiconductor structure comprises a substrate, a transistor, a first inner-layer dielectric layer, a second inner-layer dielectric layer and a first contact plug; the transistor is arranged on the substrate and comprises a gate, a source and a drain region; the first inner-layer dielectric layer is arranged on the transistor and is leveled with the top surface of the gate of the transistor; the second inner-layer dielectric layer is arranged on the first inner-layer dielectric layer; and the first contact plug is arranged in the first inner-layer dielectric layer and the second inner-layer dielectric layer and comprises a first groove portion and a first dielectric hole portion, wherein a border of the first groove portion and the first dielectric hole portion is higher than the top surface of the gate. The invention also provides a method for forming the semiconductor structure with the contact plug.

Description

technical field [0001] The present invention relates to a semiconductor structure with a contact plug and a method for forming the same, in particular to a semiconductor structure with a contact plug formed by a dual damascene process. Background technique [0002] In the existing semiconductor industry, polysilicon is widely used in semiconductor devices such as metal-oxide-semiconductor (MOS) transistors as a standard gate material choice. However, as the size of MOS transistors continues to shrink, the performance of traditional polysilicon gates is reduced due to the boron penetration effect, and the unavoidable depletion effect and other problems make the equivalent gate dielectric The thickness of the electrical layer increases and the capacitance of the gate decreases, which in turn leads to the decline of the driving ability of the device and other difficulties. Therefore, the semiconductor industry is trying to use new gate materials, such as using work function (w...

AI Technical Summary

Problems solved by technology

However, in the existing manufacturing process, the external circuit connecting the source / drain region usually includes a plurality of contact plugs connected up and down, which makes the external circuit have a problem of high resistance

Moreover, as the size of the components shrinks day by day, the contact plugs connecting the source / drain regions are likely to short-circuit with the metal gate contacts, resulting in a decline in the quality of the components, which has become a problem that needs to be solved

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