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TSV-MEMS combination

A technology of adhesive and adhesive material layer, applied in the coupling of optical waveguide, printing, microstructure device, etc.

Inactive Publication Date: 2014-05-14
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of package yields a relatively large overall size

Method used

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  • TSV-MEMS combination
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Examples

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Embodiment Construction

[0016] Example embodiments are described with reference to the drawings, wherein like reference numerals are used to designate similar or equivalent elements. The illustrated ordering of acts or events should not be considered limiting, as some acts or events may occur in different orders and / or concurrently with other acts or events. Furthermore, some of the illustrated acts or events may not be required to implement methodologies in accordance with the invention.

[0017] Disclosed embodiments include TSV-MEMS combinations and assembly methods for forming TSV die-to-MEMS die interconnects. TSV-MEMS combinations can be formed by a die-to-wafer approach, where the TSV substrates (eg, wafers) are singulated prior to bonding, or by a wafer-to-wafer approach. In the absence of an optional packaging substrate, the disclosed TSV-MEMS combination can be considered a Wafer Chip Scale Package (WCSP). The TSV die contains acoustic vias, referred to herein as vias, and the MEMS die ha...

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PUM

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Abstract

A through-substrate via (TSV)-MEMS combination includes a TSV die including a substrate and a plurality of TSVs which extend of a full thickness of the substrate. The TSV die includes a top side surface including circuitry and top side bonding pads thereon, a bottom side surface including bottom side bonding features thereon, and a through-hole through the full thickness of the substrate. A microelectromechanical systems (MEMS) die having a floating sensing structure including solder balls thereon is bound to the top side bonding pads or bottom side bonding features of the TSV die. A layer of adhesive material is surrounding the solder balls, which can provide a sealant ring for the TSV-MEMS bonds.

Description

technical field [0001] The disclosed embodiments relate to a through-silicon via (TSV)-microelectromechanical system (MEMS) combination. Background technique [0002] A CMOS microelectromechanical systems (MEMS) device is a combined combination of an electromechanical systems (MEMS) die and a CMOS integrated circuit (IC) die. CMOS IC dies are generally through silicon via (TSV) dies. The MEMS die has at least one MEMS device containing a vibration-trapping port (e.g., a floating structure such as a membrane) for sensing, and the resulting sense signal is amplified by circuitry on the TSV die, and generally is filtered. [0003] One example of a MEMS device is a micro inertial sensor. Traditional packaging of MEMS devices uses wire bonding and injection molding to protect the bonding area of ​​the device. This type of packaging results in a relatively large overall size. Contents of the invention [0004] Disclosed embodiments include through-substrate via (TSV)-MEMS c...

Claims

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Application Information

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IPC IPC(8): B81B7/00B81B7/02B81C1/00B81C3/00
CPCB81B2207/092B81B2207/093B81C1/0023H01L2224/16225
Inventor 高桥吉见久保田宏一
Owner TEXAS INSTR INC