Semiconductor processing equipment

Abstract

The invention discloses semiconductor processing equipment. The semiconductor processing equipment comprises a chamber body having a reaction cavity inside; a first tray arranged inside the reaction cavity and provided with a sheet groove for bearing a wafer; and an inductance coil which surrounds the periphery of the chamber body and is used for heating the first tray, the first tray consisting of a plurality of sub-trays, and physical gaps existing among the sub-trays. According to the semiconductor processing equipment in the invention, the first tray is separated into the plurality of sub-trays, so that influence of a skin effect on the first tray can be effectively reduced, uniformity of temperature distribution of the first tray is improved, and radial gradients of temperature distribution are lowered, thereby enabling a temperature rise of a substrate located inside the sheet groove to be more uniform, and improving a process effect of semiconductor processing equipment.

Description

technical field [0001] The present invention relates to a semiconductor processing equipment. Background technique [0002] Semiconductor processing equipment is widely used in the field of semiconductor processing. In the process of semiconductor processing, as the requirements for processing accuracy become higher and higher, the temperature uniformity of the wafer surface has attracted more and more attention, especially in the processing of LED epitaxial wafers. In order to increase productivity, multiple wafers are usually placed on a tray for simultaneous processing. In order to obtain good process consistency, the temperature of multiple wafers placed on the surface of the tray should be kept as consistent as possible, which requires that the temperature distribution on the surface of the tray should be As evenly as possible. Especially metal organic compound chemical vapor deposition (MOCVD) technology in the LED field is a compound semiconductor vapor phase epitaxy...

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Problems solved by technology

[0003] However, due to the skin effect of induction heating, that is, the induction current density of the outer circumference of the tray close to the coil is large, the calorific value is large, and the temperature is high, while the induction current density of the central area of ​​the tray away from the coil is small, the calorific value is small, and the temperature is low. , the heat compensation in the central area mainly comes from the heat conduction of the outer circumference and the heat radiation between the trays, the actual compensation effect is poor

As a result, the temperature of the tray is not uniform, which in turn affects the uniformity of the temperature distribution of the substrate on the tray, and may eventually affect the uniformity of the film deposition

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