Method and system used for heating wafers on static chuck, and CVD equipment

Abstract

The invention discloses a method used for heating wafers on a static chuck. The static chuck comprises a first heating zone corresponding to a first heater, and a second heating zone corresponding to a second heater. The method comprises following steps: a first target temperature of the first heating zone and a second target temperature of the second heating zone are obtained; a first detecting temperature of the first heating zone and a second detecting temperature of the second heating zone are detected; a first error signal is calculated according to the first target temperature and the first detecting temperature, and a second error signal is calculated according to the second target temperature and the second detecting temperature; a first correcting signal and a second correcting signal are calculated according to the first error single and the second error single respectively; and control signal of the first heater and control signal of the second heater are obtained according to the first correcting signal and the second correcting signal respectively. The method is capable of adjusting temperature changing speed of different heating zones of the heaters effectively, and inhibiting temperature disturbance effectively. The invention also provides a system and CVD equipment used for heating the wafers on the static chuck.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a method and system for heating a wafer on an electrostatic chuck and a CVD (Chemical-Vapor-Deposition, chemical vapor deposition) system with the system for heating a wafer on an electrostatic chuck )equipment. Background technique [0002] In the etching process, uneven wafer temperature will cause uneven etching results, so that some areas of the wafer after etching have high RA (Roughness Average, surface flatness), while other areas have poor RA. Due to the higher deposition coefficient of polymers at low temperatures, temperatures lower than predetermined process parameters can cause excessive polymer deposition on the wafer, resulting in poor RA in the lower temperature regions of the wafer, resulting in poor etch results. The features have tapered sidewalls and these polymer deposits are difficult to remove from the wafer, so this etch effect should be min...

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Problems solved by technology

[0004] To sum up, the disadvantage of the prior art is that the various parts of the heater are not isolated, but interrelated, and the heater is covered with a layer of uniform heat medium, which has good thermal conductivity, so the temperature of each part of the heater It is a coupling relationship, the temperature disturbance is strong, and the time constant and time lag of temperature are large

Therefore, it is difficult to achieve the ideal regulation and control effect by using a single-loop independent temperature PID controller

Especially when the set temperature of each zone is inconsistent, it is difficult to set the parameters of the PID controller

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