Formation method of fin field effect transistor

Abstract

A fin type field effect transistor forming method comprises providing a semiconductor substrate with a first groove formed inside; sequentially forming into a plurality of oxidation layers and a plurality of sacrificial layers in an interval mode inside the first groove from the lateral wall of the first groove to the center until the first groove is filled; removing the sacrificial layers which are arranged between the oxidation layers to form into a plurality of second grooves; enabling the second groove to be filled with functional layers to form into a plurality of fin portions which are arranged in an interval mode. The fin type field effect transistor forming method can accurately control the fin portion thickness of the fin type field effect transistor, improve the fin portion surface uniformity and accordingly improve the stability of the formed fin type field effect transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. With the increase of component density and integration of semiconductor devices, the gate size of transistors is getting shorter and shorter. The shortening of gate size of transistors will lead to short The channeling effect, which in turn generates leakage current, ultimately affects the electrical performance of semiconductor devices. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art proposes a Fin Field Effect Transistor (Fin FET), please refer to figure 1 and ...

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Problems solved by technology

[0006] In the prior art, the fin 11 in the fin field effect transistor is mainly formed by dry etching the semiconductor substrate 10. However, due to certain errors in the etching process, it is difficult to precisely control the thickness of the formed fin 11. The electrical properties of each fin field effect transistor formed are too different due to the different channel lengths.

Moreover, dry etching will inevitably cause damage to the sidewall of the fin portion 11, and the uniformity of the surface of the formed fin portion 11 is poor, causing the threshold voltage of the fin field effect transistor to shift, seriously affecting the fin field effect transistor. tube stability

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