Light emitting device inserted with current homogenizing structure and manufacturing method thereof

Abstract

The invention discloses a light emitting device inserted with a current homogenizing structure and a manufacturing method thereof. The light emitting device inserted with the current homogenizing structure comprises a first electrode layer, a p type degeneration semiconductor layer on the first electrode layer, an n type degeneration semiconductor layer on the p type degeneration semiconductor layer, a p type semiconductor layer on the n type degeneration semiconductor layer, an active layer on the p type semiconductor layer, an n type semiconductor layer on the active layer, and a second electrode layer on the n type semiconductor layer. By adopting the light emitting device, the current distribution uniformity during working of the semiconductor device can be improved effectively, the photo, electrical and thermal performance of the semiconductor device is improved, and the service life is prolonged.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a light-emitting device inserted with a homogenizing current structure and a manufacturing method thereof. Background technique [0002] The electrode area of ​​the light-emitting surface of the light-emitting device always only occupies a small part of its corresponding working area. The current injected by the device is likely to be concentrated near the electrode and cannot be effectively spread throughout the entire device, resulting in injection into the junction area. The current distribution is uneven, this effect is called the current edge effect. The current edge effect can easily cause local overheating of the light-emitting device and cause breakdown, which will reduce the working life of the device and limit the rated power of the device. For ordinary power diodes, the current collector effect is a common problem. When designing the device structure and electr...

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Problems solved by technology

The current edge effect can easily cause local overheating and breakdown of the light-emitting device, which will reduce the working life of the device and limit the rated power of the device

For ordinary power diodes, the current collector effect is a common problem. When designing the device structure and electrode wiring, it is always necessary to minimize the influence of the current collector effect on the rated power and working life of the device.

In addition, the current edge effect will greatly reduce the luminous efficiency

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