A ni-mn-based ferromagnetic shape memory alloy/piezoelectric composite and its application in electric field regulation of spin flipping
A memory alloy and composite material technology, which is applied in the field of Ni-Mn-based ferromagnetic shape memory alloy/piezoelectric composite material, can solve the problems of extremely demanding equipment and instruments, unfavorable device miniaturization, and complicated preparation process, and achieves guaranteed The effect of high efficiency and stability, highly stable memory device, and low energy consumption
Inactive Publication Date: 2016-09-07
NANJING UNIV
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However, most of the reversal of electric field spin regulation in single-phase multiferroic materials can be realized at low temperature and requires a large external magnetic field to drive, which consumes huge energy; Complex process is not conducive to device miniaturization
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[0018] specific implementation plan
[0019] figure 1 As shown, by applying an electric field to the piezoelectric body, the stress generated by the piezoelectric body acts on the Ni-Mn-based ferromagnetic shape memory alloy, and the stress affects the interface coupling of antiferromagnetism and ferromagnetism, thereby regulating the exchange bias and self Spin flip. The research results show that by applying an electric field to the piezoelectric body, the exchange bias of the Ni-Mn-based ferromagnetic shape memory alloy is changed, and with the change of the coercive force and saturation magnetization, the spin sign is flipped with the electric field. Magnetic measurements show that by applying an electric field at zero bias magnetic field, the spin flips, which can reduce energy loss and increase storage density.
[0020] The composite material is a piezoelectric material, which is PMN-PT single crystal; the molecular formula of Ni-Mn-based ferromagnetic shape memory all...
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Abstract
The invention discloses a Ni-Mn-based ferromagnetic shape memory alloy / piezoelectric composite material. A Ni-Mn-based ferromagnetic shape memory alloy and a piezoelectric material form the composite material. The piezoelectric material is a PMN-PT single crystal. The molecular formula of the Ni-Mn-based ferromagnetic shape memory alloy is Ni-Mn-Sn. The two materials are both flaky materials and are attached each other to form the composite material. The thickness of the ferromagnetic shape memory alloy ranges from 1 mm to 2mm, wherein rapid-quenching thin bands are overlapped to form the ferromagnetic shape memory alloy, and the thickness of each rapid-quenching thin band ranges from 20 microns to 50 microns, or the ferromagnetic shape memory alloy is a block material which is 1-2 mm thick. The thickness of the piezoelectric material is 0.5 mm. According to the Ni-Mn-based ferromagnetic shape memory alloy / piezoelectric composite material, stress generated by the piezoelectric material is used for regulating the coupling between an anti-ferromagnetic interface and a ferromagnetic interface of the Ni-Mn-based memory alloy, and the spin flip of electric field regulation is realized in a zero bias field through the exchange bias effect of electric field regulation.
Description
technical field [0001] The invention relates to a Ni-Mn base ferromagnetic shape memory alloy / piezoelectric body composite material with the spin reversal property regulated by an electric field. technical background [0002] The spin flip regulated by the electric field has broad application prospects in the fields of high-density storage, sensors, and spintronics. Currently, electric field-regulated spin flipping has been reported in single-phase multiferroic materials, magnetic tunnel junctions, and ferromagnetic / piezoelectric (ferroelectric) systems. The control method is mainly reflected in the control of the spin flip by changing the coercive force, magnetic domain and magnetoresistance by the electric field. However, most of the reversal of electric field spin regulation in single-phase multiferroic materials can be realized at low temperature and requires a large external magnetic field to drive, which consumes huge energy; The complexity of the process is not cond...
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IPC IPC(8): H01L43/10
Inventor 王敦辉杨艳婷都有为
Owner NANJING UNIV