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Low-temperature wafer bonding method

A wafer bonding, low temperature technology, applied in instruments, welding equipment, optomechanical equipment, etc., can solve the problems of low bonding strength, limitation, limited use temperature of devices, etc., to achieve the effect of high efficiency and avoid damage

Active Publication Date: 2014-06-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, due to the low bonding strength of adhesive bonding and low-temperature solder bonding, the use temperature of the device is limited, and the application is greatly restricted.
Although the low-temperature surface activation bonding takes a long time for the bonding process, due to the surface activation treatment and low-temperature annealing, the bonding strength can meet the requirements of subsequent device fabrication.

Method used

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] This low-temperature wafer bonding method provided by the present invention first cleans the two wafers, then deposits a thin oxide layer on the bonding regions of the two wafers respectively, and removes the oxide layer deposited on at least one of the wafers. Surface activation treatment is carried out, and the oxide layers of the two processed wafers are relatively pasted together, and finally sent to the bonding machine to apply extrusion force, so as to realize the bonding of the two wafers.

[0031] like figure 1 as shown, figure 1 A flow chart of a method for low temperature wafer bonding according to an embodiment of the present invention is shown, and the method includes the following steps:

[0032] Ste...

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Abstract

The invention discloses a low-temperature wafer bonding method which comprises the steps: cleaning two wafers; depositing an oxide layer on the surfaces of the two cleaned wafers; activating the surface of at least one of the two wafers; enabling the surfaces of the two wafers the surfaces of which are activated in a non-vacuum environment to be in mutual contact and applying an external force to ensure that the two wafers are bonded; and performing low-temperature annealing on the bonded wafers.

Description

technical field [0001] The present invention relates to the technical field of wafer bonding, in particular to a low temperature wafer bonding method in which at least one of two wafers may have processed or at least partially processed devices. This preparation method is used in the wafer bonding technology for the integration of silicon and non-silicon-based CMOS devices, IC devices, and optoelectronic devices. Background technique [0002] With the development of integrated circuits, silicon-on-insulator (SOI) technology is recognized by the industry as one of the solutions to replace the existing monocrystalline silicon materials in the era of nanotechnology, and it is a powerful tool to maintain the trend of Moore's Law. [0003] SOI materials are the basis for the development of SOI technology, and high-quality SOI materials have always been the primary factor restricting SOI technology from entering large-scale industrial production. In recent years, with the continu...

Claims

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Application Information

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IPC IPC(8): B81C3/00
Inventor 刘洪刚李运王盛凯张雄郭浩孙兵常虎东赵威
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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