An accelerated test method for low dose rate enhancement effect of bipolar devices based on high temperature hydrogen immersion technology

A bipolar device, enhancement effect technology, applied in the field of electronics, can solve the problem of long irradiation time

Active Publication Date: 2016-05-25
CHINA ACADEMY OF SPACE TECHNOLOGY +2
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The present invention is to solve the problem that the existing ground experiments use the low dose rate of the actual space environment to evaluate the anti-radiation ability of electronic components, resulting in long irradiation time

Method used

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  • An accelerated test method for low dose rate enhancement effect of bipolar devices based on high temperature hydrogen immersion technology
  • An accelerated test method for low dose rate enhancement effect of bipolar devices based on high temperature hydrogen immersion technology
  • An accelerated test method for low dose rate enhancement effect of bipolar devices based on high temperature hydrogen immersion technology

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specific Embodiment approach 1

[0014] Specific embodiment one: a kind of bipolar device low dose rate enhancement effect accelerated test method based on high temperature hydrogen immersion technology described in this embodiment, it comprises the following steps:

[0015] Step 1. Use TCAD software to simulate the electrical properties of the bipolar device and the change law of ionizing radiation defects in the hydrogen atmosphere. According to the oxide charge and interface state density in the bipolar device in the hydrogen atmosphere, the hydrogen immersion time is 10 Minutes to 5 hours, the hydrogen concentration range is 0.01%-200%;

[0016] Step 2. Place the bipolar device in step 1 in the glass tube, use a mechanical pump to evacuate until the vacuum in the glass tube is equal to or less than 0.0001Pa, and then inject hydrogen into the glass tube until the vacuum in the glass tube The hydrogen concentration is the hydrogen concentration obtained in step one, and the glass tube is sealed until the hy...

specific Embodiment approach 2

[0025] Specific embodiment two: The difference between this embodiment and the accelerated test method for low dose rate enhancement effect of bipolar devices based on high-temperature hydrogen immersion technology described in specific embodiment one is that in step three, the heating temperature is 150 ~200°C, the holding time is 10 minutes to 120 minutes.

[0026] In this embodiment, the heating temperature is high, which is beneficial to the diffusion of hydrogen gas, so the heat preservation time for the sealed glass tube can be shortened, and the test time can be shortened.

specific Embodiment approach 3

[0027] Specific Embodiment 3: The difference between this embodiment and the accelerated test method for low dose rate enhancement effect of bipolar devices based on high-temperature hydrogen immersion technology described in specific embodiment 1 is that in step 1, the time for hydrogen immersion is obtained The specific method with hydrogen concentration is:

[0028] Using TCAD to simulate the oxide charge density and interface state density in the bipolar device in the hydrogen atmosphere under different hydrogen immersion time and hydrogen concentration combinations, select the oxide charge in the bipolar device in the hydrogen atmosphere according to the simulation results The density is 1E10 / cm 3 to 1E15 / cm 3 range, and the interface state density in a bipolar device in a hydrogen atmosphere is 1E10 / cm 3 to 1E15 / cm 3 Any set of hydrogen immersion time and hydrogen concentration in the multiple sets of data within the range is used as the selection result.

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Abstract

The invention provides a method for an acceleration test of the low-dosage-rate enhancement effect of a bipolar device based on the high-temperature hydrogen soaking technology and relates to the field of the electronic technology. The method aims at solving the problem that due to the fact that the low-dosage rate of an actual spatial environment is adopted by an existing ground experiment to estimate the radiation-resistant capacity of an electronic element, the radiation time is long. According to the method, TCAD software is used for simulating the change rule of the electric performance of the bipolar device and an ionizing radiation shortage in a hydrogen atmosphere; according to charges of oxide and the interface state density in the bipolar device in the hydrogen atmosphere, the hydrogen soaking time and the hydrogen density are obtained; generation of the ionizing radiation shortage in the bipolar device is accelerated through hydrogen soaking and heating, so that the function that low-dosage-rate enhancement effect evaluation is accelerated is achieved and the purpose that the radiation time of high-dosage-rate radiation conducted on the bipolar device on a high-temperature hydrogen soaking condition is shorter than that of low-dosage-rate radiation conducted on the bipolar device is achieved. The method can be applied to a spaceflight electronic system.

Description

technical field [0001] The invention relates to an accelerated test method for low dosage rate enhancement effect of bipolar devices based on high-temperature hydrogen immersion technology. It belongs to the field of electronic technology. Background technique [0002] In an ionizing radiation environment, the radiation damage of bipolar devices and circuits under low dose rate irradiation is much greater than that under high dose rate conditions, which is the so-called enhanced low dose rate radiation damage effect (ELDRS) . The ELDRS effect commonly exists in electronic components during their service in the space environment, which brings great challenges to the ground radiation simulation test and evaluation method for the radiation resistance of electronic components. Since the typical radiation dose rate received by a spacecraft during its in-orbit service is 10 -4 ~10 -2 rad(Si) / s, while the dose rate used in common ground irradiation experiments is 50-300rad(Si) / ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00
Inventor 李鹏伟李兴冀赵玉玲刘艳秋刘广桥刘超铭周捧娟孙毅杨剑群朱伟娜何世禹
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
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