Structure and method for testing performances of inter-layer dielectric layer

Abstract

The invention provides a structure and method for testing the performances of an inter-layer dielectric layer. The space over a grid electrode is used for collecting charges which are brought by plasma and it is ensured that the grid electrode and an antenna are isolated by the inter-layer dielectric layer. When the charges received by the antenna are accumulated to an amount that an inter-layer insulating layer can not bear, the charges will penetrate through the inter-layer insulating layer and damage a semiconductor device. When detection is carried out, leaked currents and threshold voltages of the semiconductor device are detected so that whether the semiconductor device is damaged or not can be judged. Thus, whether the inter-layer dielectric layer is broken through or not can be judged. The plasma-damage-resisting capacity of the inter-layer dielectric layer can be detected.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a test structure and a test method for the performance of an interlayer dielectric layer. Background technique [0002] After the semiconductor front-end process is completed, an interlayer dielectric (ILD) is formed on the surface of the device, and then the metal interconnection line layer of the later process is prepared. Therefore, the interlayer dielectric layer not only provides good insulation and prevents short circuits between conductors of different layers, but also protects the device from plasma damage. [0003] Since the metal interconnection layer is multi-layered, the first layer is usually connected to the gate, source, drain, and base of the device through vias. However, other parts of the first layer may not be connected to the device. The connection is connected to the back-layer metal connection, so the interlayer dielectric layer needs to maintain good in...

AI Technical Summary

Problems solved by technology

[0004] Because a large amount of charge is usually generated when making metal connections, the continuous accumulation of charge will cause plasma damage to the interlayer dielectric layer. If the plasma damage is severe, the leakage current of the entire device will increase, thereby reducing the performance of the device.

[0005] However, there is currently no test structure that can detect the plasma damage resistance of the interlayer dielectric layer. Usually, the plasma damage resistance test structure can only detect the plasma damage caused by the post-stage metal interconnection process, and cannot detect the interlayer dielectric layer. Plasma resistance of the interlayer

Images