Storage System Structure and Wear Leveling Algorithm Based on Phase Change Memory

Abstract

The invention discloses a memory system structure based on phase change memorizers and a loss balancing algorithm of the memory system structure. The memory system structure comprises an internal and external memory controller, peripheral equipment of the internal and external memory controller, an internal memory unit and an external memory unit, wherein the internal memory unit and the external memory unit are connected with the internal and external memory controller; the internal memory unit comprises one phase change memorizer (PCM) and a dynamic random access memorizer (DRAM), and the external memory unit comprises one phase change memorizer (PCM). Internal memory and external memory which are separated in a traditional computer memory system structure are combined, the data reading and writing capacity is higher by hundreds of thousands of times than an existing external memory connected through external I / O, meanwhile, the memory system structure saves power greatly, the contradiction that the external memory is unmatched with the internal memory in performance, and a traditional memory hierarchical structure is unmatched with a process in performance is solved fundamentally, the speed and power consumption of the reading and writing process are be superior to an existing memory system by over ten thousand times, and huge performance difference between the internal memory and the external memory is solved fundamentally.

Description

Technical field [0001] The invention relates to a storage system structure based on a phase change memory (Phase Change Memory, PCM) internal and external memory storage unit and its wear leveling algorithm. Background technique [0002] The computer storage system includes memory and external storage. Traditional memory (DRAM) and external memory (hard disk) have huge differences in speed and energy consumption, such as figure 1 Shown. [0003] By comparison, the phase change memory PCM is compared with the dynamic random access memory DRAM. The phase change memory PCM is non-volatile and does not require a refresh operation; DRAM requires a large amount of space on the hardware and cannot be reduced to 20 nanometers or more It can be implemented on a small chip, and phase change memory can even be implemented on a 5-nanometer chip. Therefore, the phase change memory PCM with strong plasticity becomes a very attractive memory to replace the dynamic random access memory DRAM. [0...

AI Technical Summary

Problems solved by technology

[0004] However, the use of phase change memory PCM has the following problems: 1. The asymmetry of "reading" and "writing" speeds

In previous studies, only PCM was used to replace DRAM as main memory, but no memory structure was used to replace hard disk as external memory

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