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Sputtering systems for liquid targets

A sputtering system and liquid target technology, applied in sputtering plating, semiconductor devices, metal material coating processes, etc., can solve the problems of no production environment, difficult and practical use of alloy targets, inconvenience, etc.

Inactive Publication Date: 2016-05-18
NUVOSUN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such measures are generally considered too inconvenient and too expensive to be used in production environments
If indium and gallium combine to form an alloy, a eutectic phase of 16.5 atomic % indium forms and melts at 15.7°C, making said alloy targets extremely difficult to use in any practical way

Method used

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  • Sputtering systems for liquid targets
  • Sputtering systems for liquid targets
  • Sputtering systems for liquid targets

Examples

Experimental program
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Embodiment

[0053] Magnetron components (such as figure 2 or image 3 shown) contains a horizontal magnetron with a gallium-containing liquid target and a rotatable magnetron with an indium-containing solid target. The flow of gallium and indium from the rotatable magnetron by applying DC power to the rotatable magnetron and horizontal magnetron while the rotatable magnetron is rotating at a rate of about 15 rpm And produced. A DC power of about 1 kW / ft target was applied to the horizontal magnetron; a DC power of about 3 kW / ft target was applied to the rotatable magnetron. The chamber between the magnetrons (e.g. image 3 Chamber 17) operates at an argon pressure of about 5 millitorr (mTorr), the chamber with the magnetron assembly (e.g. image 3 The chamber 22) is operated at an argon pressure of about 3 mTorr.

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Abstract

A sputtering system consisting of a magnetron assembly that deposits a liquid metal film on a substrate. The magnetron assembly comprises a horizontal planar magnetron with a liquid metal target, a cylindrical rotatable magnetron with a metal target, and a set forming a chamber between the planar surface and the rotatable magnetron One or more shields.

Description

[0001] cross reference [0002] This application claims priority to US Provisional Patent Application Serial No. 61 / 522,621, filed August 11, 2011, which is hereby incorporated by reference in its entirety. Background technique [0003] Thin-film solar cells formed with copper indium gallium (di)selenide (CIGS) as the absorber layer have become a popular solution in at least some cost-competitive solar devices. One of the more economically attractive methods of fabricating these cells utilizes wideweb sputtering of the constituent materials, or alloys of those materials, onto thin flexible substrates. It has been shown that the highest laboratory cell efficiencies occur when the first part of the absorber layer consists of an indium / gallium selenide layer. This occurs in the first phase of CIGS's well-known "3-phase" approach, developed by the National Renewable Energy Laboratory (NREL) in 1994 and described in the Noufi U.S. Patent No. 5,441,897 (Method off abricating high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/042C23C14/34
CPCC23C14/3428C23C14/352H01J37/3408H01J37/3426H01J37/3429H01J37/32036H01J37/3405Y02E10/541H01L31/1844C23C14/35
Inventor D·R·霍拉斯
Owner NUVOSUN