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Inductor and composition for making its gap layer

A technology for inductors and gap layers, applied in the direction of inductors, fixed inductors, bismuth compounds, etc., can solve the problem of inductor inductance performance degradation, inductor performance degradation, inductor DC-bias performance and bias-TCL performance Deterioration and other issues

Active Publication Date: 2014-07-02
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This diffusion phenomenon causes a significant reduction in the thickness of the gap layer, resulting in a degradation of the inductor DC-bias performance and bias-TCL performance
The thickness of the gap layer needs to be increased to avoid this, but in the case of increased gap layer thickness, thick gap layer sheets need to be used, making it difficult to achieve thin inductors
[0009] Second, the gap layer degrades the inductance performance of the inductor
In particular, when the sintering temperature is higher, the diffusion of Ti material to the device body is more serious, thereby making the magnetic properties of the device body worse, which leads to the deterioration of the inductance performance of the inductor
[0010] Third, inductor performance degradation due to diffusion of Fe components or diffusion of Ni components
This diffusion phenomenon causes the deterioration of the magnetic properties of the device body, resulting in a decrease in the inductance of the inductor

Method used

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  • Inductor and composition for making its gap layer
  • Inductor and composition for making its gap layer
  • Inductor and composition for making its gap layer

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Embodiment

[0059] Based on the content of the entire mixture, at each ratio (mol%) shown in Table 1 below, by mixing zirconia (ZrO 2 ) powder and bismuth oxide (Bi 2 o 3 ) to prepare each mixture. Here, in addition to zirconia (ZrO 2 ) powder and bismuth oxide (Bi 2 o 3), a small amount of device main components such as zinc (Zn), copper (Cu), etc., or liquid sintering additives can be selectively added, but because the amount is relatively small, it is assumed that the total content of zirconia powder and bismuth oxide is 100mol%.

[0060] The mixture was prepared into a slurry type, and the slurry was dried at a temperature of 120° C. for 12 hours, and then ground to obtain a powder. A PVA binder (5% dilution liquid) was added to the powder at a level of about 10 wt% based on the powder. 2.5 g of the mixture was fed into a toroidal core mold with an outer diameter of 20 mm and an inner diameter of 14 mm, then extruded and molded for about 1 minute under a pressure of 2 tons, and...

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Abstract

The present invention discloses an inductor and a composition for making its gap layer. The inductor comprises a main body and a gap layer arranged inside the main body to control metal oxygen material and the contraction ratio.

Description

[0001] References to related applications [0002] This application claims Korean Patent Application Serial No. 10- 2012-0155037, the entire content of which is hereby incorporated by reference into this application. technical field [0003] The present invention relates to an inductor and a composition for making a gap layer thereof, and more particularly, to an inductor capable of having a smaller thickness and improved inductive properties, and a composition for making a gap layer thereof. Background technique [0004] As mobile devices have become miniaturized and multifunctional, miniaturization of electronic components has also proceeded accordingly. In order to meet these needs, film-type chip inductors capable of small size and small thickness while having high inductance and high Q performance are being developed. [0005] A general thin-film type chip inductor can be composed of: a device body having a multilayer structure obtained by laminating ceramic insulatin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F17/00B32B18/00C04B35/26C04B35/46H01F1/34H01F3/14
CPCC01F7/02C01G23/047C01G25/02C01G29/00H01F17/00
Inventor 金虎润韩镇宇千旼径金明基
Owner SAMSUNG ELECTRO MECHANICS CO LTD