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thin film transistor structure

A thin-film transistor and gate structure technology, which is applied in the field of thin-film transistor structure, can solve the problems such as the inability to narrow the frame, achieve the effect of reducing the size of circuit components and improving the inability to narrow the frame

Inactive Publication Date: 2016-10-05
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, under the customized demand for ultra-narrow bezels, the expansion of GOA circuit components will lead to the problem that the bezel cannot be narrowed

Method used

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Experimental program
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Embodiment Construction

[0042] Figure 2A ~ Figure 2B It is a schematic top view of a thin film transistor structure according to an embodiment of the present invention. Figure 2C for Figure 2A A schematic cross-sectional view of a part of the thin film transistor structure along the A-A' tangent line. Please merge reference Figure 2A ~ Figure 2C . The TFT structure 200 of the present invention includes: a substrate 210 , a gate structure 220 , a semiconductor active layer 240 , a drain structure 250 , a source structure 260 , and may further include a protection layer 270 .

[0043] In addition, the above Figure 2A A plurality of horseshoe-shaped source structures 260 are connected to each other and two rows are opposed to each other as an example for illustration. the above Figure 2B and Figure 2A have the same basic structure, the difference is that Figure 2A The curve portion C1 of the source structure 260 in the Figure 2B The straight line part P1, and the thin film transistor s...

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PUM

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Abstract

The invention provides a thin film transistor structure, which includes a substrate, a gate structure, a semiconductor active layer, a drain structure and a source structure. Both the gate structure and the semiconductor active layer are disposed above the substrate. Both the drain structure and the source structure are disposed on the first surface of the semiconductor active layer. At least one gap is formed between the source structure and the drain structure, wherein the gap extends along the first surface of the semiconductor active layer and is located in the projected area of ​​the gate structure. The first part of the gap includes a first straight section, a first curved section and a second curved section, wherein the first curved section and the second curved section are respectively connected to the first end and the second end of the first straight section, and the second The bending directions of the first bending section and the second bending section are opposite to each other.

Description

technical field [0001] The invention relates to a transistor structure, in particular to a thin film transistor structure. Background technique [0002] In the traditional thin-film transistor liquid-crystal display (TFT-LCD) structure, a plurality of complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) manufacturing processes are welded on the periphery of the liquid crystal panel. Driver chip (IC) to complete the configuration of the driver circuit. However, this will increase the dependence of the traditional TFT-LCD on the driver IC and the production cost, and it will not be able to improve the integration level of the TFT-LCD. [0003] The current and future trends are dominated by ultra-large panels and ultra-high-resolution TFT-LEDs. Therefore, in order to improve the integration level of the TFT-LCD, it is the current mainstream technology to manufacture the TFT-LCD by using the gate on array (GOA) technology. GOA technology is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/08
CPCH01L29/1037H01L29/78603H01L29/78696H01L29/41733
Inventor 徐正洋沈柏元陈家芳
Owner AU OPTRONICS CORP