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Thin film transistor structure

A technology of thin film transistor and contact structure, applied in the field of thin film transistor structure, can solve problems such as the inability to narrow the frame, and achieve the effect of reducing the size of circuit components and improving the inability to narrow the frame

Inactive Publication Date: 2014-07-02
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under the customized demand for ultra-narrow bezels, the expansion of GOA circuit components will lead to the problem that the bezel cannot be narrowed

Method used

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  • Thin film transistor structure
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Figure 2A ~ Figure 2B It is a schematic top view of a thin film transistor structure according to an embodiment of the present invention. Figure 2C for Figure 2A A schematic cross-sectional view of a part of the thin film transistor structure along the A-A' tangent line. Please merge reference Figure 2A ~ Figure 2C . The TFT structure 200 of the present invention includes: a substrate 210 , a gate structure 220 , a semiconductor active layer 240 , a drain structure 250 , a source structure 260 , and may further include a protection layer 270 .

[0043] In addition, the above Figure 2A A plurality of horseshoe-shaped source structures 260 are connected to each other and two rows are opposed to each other as an example for illustration. the above Figure 2B and Figure 2A have the same basic structure, the difference is that Figure 2A The curve portion C1 of the source structure 260 in the Figure 2B The straight line part P1, and the thin film transistor s...

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PUM

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Abstract

The invention provides a thin film transistor structure comprising a substrate, a grid structure, a semiconductor active layer, a drain structure, and a source structure. The grid structure and the semiconductor active layer are disposed on the upper part of the substrate. The drain structure and the source structure are disposed on the first surface of the semiconductor active layer. At least a gaps is formed between the source structure and the drain structure, and the gap is extended from the first surface of the semiconductor active layer to the projected area of the grid structure. The first part of the gap comprises a first linear segment, a first curved segment, and a second curved segment. The first curved segment and the second curved segment are respectively connected with the first end and the second end of the first linear segment, and the curved direction of the first curved segment and the curved direction of the second curved segment are opposite to each other.

Description

technical field [0001] The invention relates to a transistor structure, in particular to a thin film transistor structure. Background technique [0002] In the traditional thin-film transistor liquid-crystal display (TFT-LCD) structure, a plurality of complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) manufacturing processes are welded on the periphery of the liquid crystal panel. The driver chip (IC) to complete the configuration of the driver circuit. However, this will increase the dependence of the traditional TFT-LCD on the driver IC and the production cost, and it will not be able to improve the integration level of the TFT-LCD. [0003] The current and future trends are dominated by ultra-large panels and ultra-high-resolution TFT-LEDs. Therefore, in order to improve the integration level of the TFT-LCD, it is the current mainstream technology to manufacture the TFT-LCD by using the gate on array (GOA) technology. GOA technology...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/08
CPCH01L29/1037H01L29/78603H01L29/78696H01L29/41733
Inventor 徐正洋沈柏元陈家芳
Owner AU OPTRONICS CORP