Unlock instant, AI-driven research and patent intelligence for your innovation.

Magnetron sputtering equipment

A magnetron sputtering and equipment technology, applied in the field of magnetron sputtering equipment, can solve the problems of widening target thickness, rising production cost, uneven film formation on the substrate surface, etc. The effect of uneven film and simple structure

Inactive Publication Date: 2016-03-30
BOE TECH GRP CO LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this large-scale vertical magnetron sputtering equipment, there are multiple targets, and the multiple targets are arranged to form a queue, and the substrate (panel) is arranged in parallel with the above-mentioned queue, because there are gaps between the multiple targets, resulting in Uneven film formation on the substrate surface
The current solution is mainly to keep the substrate or target free to shake during film formation, but this will not only greatly increase the energy consumption and complexity of the equipment, but also need to widen the thickness of the target, resulting in an increase in production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetron sputtering equipment
  • Magnetron sputtering equipment
  • Magnetron sputtering equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Such as figure 1 As shown, the embodiment of the magnetron sputtering equipment of the present invention includes a film-forming chamber 10 and a target 1 arranged inside the film-forming chamber 10, the target 1 is multiple and arranged parallel to each other, and the multiple targets The materials 1 are arranged to form a queue 11. The inside of the film forming chamber 10 is provided with a first heating device 101 opposite to the queue 11 for heating the substrate 100. The inside of the film forming chamber 10 is provided with a The gap corresponds to the second heating device 102 . The second heating device 102 is also used for heating the substrate 100 .

[0021] In the embodiment of the magnetron sputtering equipment of the present invention, wherein, the interior of the film forming chamber 10 is provided with a substrate installation area 2 for installing the substrate 100, the substrate installation area 2 is located between the first heating device 101 and t...

Embodiment 2

[0025] Such as figure 2 As shown, the difference between the embodiment of the magnetron sputtering equipment of the present invention and the first embodiment is that a supporting frame 4 for supporting the substrate 100 is arranged between the substrate installation area 2 and the first heating device 101, and the second heating The device 102 is a plurality of heating support rods 5 arranged in parallel, and the plurality of heating support rods 5 are arranged on the support frame 4 and correspond to the gaps between the targets 1 respectively. The heating support rod 5 is used for heating the substrate 100 and also supporting the substrate 100 .

[0026] In the embodiment of the magnetron sputtering device of the present invention, a plurality of heating support rods 5 are respectively connected with the temperature adjustment mechanism. The heating support rod 5 is an electric heating device. The temperature adjustment mechanism is used to adjust the temperature of the...

Embodiment 3

[0028] Such as image 3 , Figure 4 As shown, the embodiment of the magnetron sputtering equipment of the present invention includes a film-forming chamber 10' and a target 1' disposed inside the film-forming chamber 10'. There are multiple target materials 1', and the multiple targets The substrates 1' are arranged to form a queue 11', and a third heating device 30 for heating the substrate 100 is provided inside the film forming chamber 10' opposite to the queue 11'.

[0029] The third heating device 30 is a heating plate. The third heating device 30 includes a plurality of heating strips 31 arranged in parallel, there are gaps between the plurality of heating strips 31, and the plurality of heating strips 31 correspond to the gaps between the targets 1'.

[0030] Preferably, the heating strip 31 is parallel to the target 1'.

[0031] In the magnetron sputtering equipment of the present invention, the second heating device or the third heating device corresponds to the ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses magnetron sputtering equipment. The magnetron sputtering equipment comprises a film-forming chamber and a plurality of targets which are arranged into a queue; a first heating device opposite to the queue and used for heating a base plate is arranged inside the film-forming chamber; and a second heating device corresponding to gaps among the targets is arranged inside the film-forming chamber. According to the magnetron sputtering equipment disclosed by the invention, the second heating device or the third heating device is utilized, so that formed temperatures on the base plate are not uniform, and temperature difference among different areas on the base plate causes that attaching speed of atoms in different areas on the base plate is different, and therefore, film-forming velocity can be regulated to improve film-forming unevenness. And the magnetron sputtering equipment disclosed by the invention is simple in structure and can effectively prevent the film-forming unevenness on the surface of the substrate.

Description

technical field [0001] The invention relates to a device for coating metal materials by sputtering, in particular to a magnetron sputtering device. Background technique [0002] As a key device, thin film field effect transistor directly affects the performance of thin film field effect transistor liquid crystal display. In the existing TFT-LCD (thin film field effect transistor LCD) manufacturing field, the preparation of the thin film field effect transistor is usually completed by means of magnetron sputtering coating. [0003] The phenomenon that energetic particles (such as argon ions) bombard the solid surface and cause various particles (such as atoms, molecules or molecular clusters) on the solid surface to escape from the solid surface is called "sputtering". In the magnetron sputtering coating process, the positive ions generated by argon ionization are usually used to bombard the solid (target), and the sputtered neutral atoms are deposited on the substrate (subs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
Inventor 刘晓伟郭会斌冯玉春王守坤郭总杰
Owner BOE TECH GRP CO LTD