A method and device for matching radio frequency pulse power in a vacuum processing chamber

Abstract

The invention provides a radio frequency pulse power coupling method and apparatus for a vacuum treatment cavity. The method comprises the following steps: presetting a first reflection power standard value in a first radio frequency pulse signal generator and a reflection power standard value in a second radio frequency pulse signal generator; and searching for a first radio frequency and a second radio frequency corresponding to minimum reflection power by use of a self-learning cycling mode. According to the radio frequency pulse power coupling method and apparatus for the vacuum treatment cavity, through automatic adjustment of a radio frequency pulse frequency, by use of the self-learning cycling mode, accurate frequency sweeping is carried out for a small scope, the feedback of radio frequency power is obtained, and minimum reflection radio frequency power is searched for. The realization cost is low, there is no need to add too much equipment cost, a certain time delay does not exist, within such a period, power obtained by a load is controllable, and the etching process is not influenced.

Description

technical field [0001] The invention relates to the field of radio frequency pulse etching, in particular to a method and device for matching radio frequency pulse power of a vacuum processing chamber. Background technique [0002] Plasma devices are widely used in fabrication processes for manufacturing integrated circuits (ICs) or MEMS devices. One notable use for this is inductively coupled plasma (ICP) devices. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active particles interact with the wafer to cause various physical and chemical reactions on the surface of the material, thereby changing the surface properties of the material. [0003] ICP devices can complete a variety of processes in semiconductor manufacturing, such as anisotropy, isotropic etching and CVD (Chemical VaporDeposition). For anisotropic etching, the ICP device is used to generate high-density plasma, and plasma gen...

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Problems solved by technology

[0007] 1. The principle of the automatic matching device is complicated and the cost is high, which increases the cost of the whole set of equipment;

[0008] 2. There is a certain time delay from the detection of the load change to the completion of the tuning of the motor drive capacitor. During this period, the power obtained by the load is uncontrollable, which is a potential factor affecting the process result

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